MASMCG58A Allicdata Electronics
Allicdata Part #:

1086-5784-ND

Manufacturer Part#:

MASMCG58A

Price: $ 4.67
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 58V 93.6V DO215AB
More Detail: N/A
DataSheet: MASMCG58A datasheetMASMCG58A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
152 +: $ 4.24359
Stock 1000Can Ship Immediately
$ 4.67
Specifications
Voltage - Clamping (Max) @ Ipp: 93.6V
Supplier Device Package: SMCG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 16A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 64.4V
Voltage - Reverse Standoff (Typ): 58V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MASMCG58A TVS-Diodes are among the most useful components in the electronics field, mainly due to their ability to protect sensitive electronic components and devices from voltage surges. They provide protection for electronics and other components against high levels of overvoltages. The MASMCG58A is a two-terminal, transient voltage suppression diode which provides s robust protection against sensitive components against transient overvoltages by clamping the voltage between its cathode and its anode to a safe level.The MASMCG58A is composed of two distinct parts, the p-type silicon junction, which forms the anode, and the n-type silicon junction, which forms the cathode of the diode. The internal structure of the TVS diode consists of a planar diode with a thin silicon carbide wafer layer providing a hardening mechanism. The charge is stored in the junction region which is formed by the n-type and the p-type regions. This junction also provides a low leakage current and fast reaction time. A diffused zener diode has been added to the design in order to provide zener protection in the event of an overvoltage.The application of the MASMCG58A TVS diode is mainly to suppress high voltage divergences. The primary purpose of this diode is to limit the peak transient voltage applied to the cathode relative to the anode to a safe level. The device has an intrinsic capability to absorb ESD and other transients, thus ensuring reliable protection against overvoltage events. It also offers a low capacitance and a low filtering effect during high frequency signals.The main working principle of MASMCG58A works in two stages. The first stage is the avalanche region which occurs when the voltage is increased more than the breakdown voltage. This causes the breakdown of the junction and the electrons, which were formerly immobile, to become freely moving and thus create a conductive path between the anode and the cathode. The second stage of operation is the zener region, which occurs when the voltage is further increased more than the zener voltage. The electrons which become freely moving during the avalanche region create a conductive path which provides a safe clamping voltage between the anode and the cathode. This prevents any overvoltage from further damaging the device.Overall, the MASMCG58A TVS-Diodes provide a robust protection against sensitive components from transient overvoltages by clamping the voltage between its cathode and its anode to a safe level. In addition, this device also provides a low capacitance and a low filtering effect during high frequency signals, which makes it useful and reliable in the application of suppressing high voltage divergences.

The specific data is subject to PDF, and the above content is for reference

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