MASMCGLCE54A Circuit Protection

Voltage - Clamping (Max) @ Ipp:	87.1V
Supplier Device Package:	SMCG (DO-215AB)
Package / Case:	DO-215AB, SMC Gull Wing
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	100pF @ 1MHz
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	1500W (1.5kW)
Current - Peak Pulse (10/1000µs):	17.2A
Series:	Military, MIL-PRF-19500
Voltage - Breakdown (Min):	60V
Voltage - Reverse Standoff (Typ):	54V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Introduction

TVS diodes, also known as transient voltage suppressors (TVS), are used to protect electrical and electronic circuits against damaging voltage transients, spikes and surges. TVS diodes are designed to reduce the peak voltage to a safe level, and provide surge protection against over-voltage transients present on power lines, data lines, telecommunication lines, and even on-board circuitry.The MASMCGLCE54A (Metal Oxide Silicon Nitride Controlled Gate Low Capacitance ESD Array) is a type of TVS diode which provides increased ESD protection in applications such as consumer electronics, medical electronics, industrial electronics, automotive, and telecom. It is suitable for use with any IEC-1000-4-2 Air Gap discharge environment, providing the highest levels of electrostatic discharge (ESD) protection and stability available.

Characteristics of MASMCGLCE54A

The MASMCGLCE54A is a low capacitance ESD device utilizing advanced nitride-oxide silicon technology. This provides superior ESD protection with drastically lower capacitances than comparable devices. Its small footprint and wide operating voltage range of 3-45Vdc make it an ideal choice for applications where board space is limited. The device is rated at 2A continuous drain current, up to 2.5kV ESD protection, and is RoHS compliant.The device also features an integrated TVS diode structure for ESD protection. This reduces device capacitance and ensures reliable ESD performance. Additionally, the integrated TVS diode structure tolerance is precise and consistent, allowing for a compact form factor.

Applications and Working Principle

The MASMCGLCE54A is an ideal choice for applications such as consumer electronics, medical electronics, industrial electronics, automotive, and telecom. It can be used to replace other footprints from overvoltage and ESD protection devices, offering the most economical and space-saving solution. The device provides superior performance in fast transient conditions due to its low capacitance and high peak power handling capability.The MASMCGLCE54A working principle is based on the principle of reverse-biased protection. This type of protection is achieved by the built-in P-N junction diode reverse-biased when exposed to an over-voltage transient. When the transient voltage exceeds the breakdown voltage of the diode, the device absorbs the transient energy and reduces the peak voltage to a safe level, thus protecting the connected electronics from harm. The device is also capable of providing protection against ESD and surge induced failures. Its high peak power handling capability, low capacitance, and integrated TVS diode structure provide ESD protection with superior response times and stability. This ensures the reliable protection of various pieces of electronics from electrostatic damage.

Conclusion

The MASMCGLCE54A is a low capacitance ESD device which provides superior ESD protection with drastically lower capacitances than comparable devices. Its applications include consumer electronics, medical electronics, industrial electronics, automotive, and telecom and it is suitable for use with any IEC-1000-4-2 Air Gap discharge environment. The device is rated at 2A continuous drain current, up to 2.5kV ESD protection, and is RoHS compliant. Its working principle is based on the principle of reverse-biased protection, which ensures the reliable protection of various pieces of electronics from electrostatic damage.

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