MASMCJ110A Allicdata Electronics
Allicdata Part #:

1086-5938-ND

Manufacturer Part#:

MASMCJ110A

Price: $ 4.50
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V DO214AB
More Detail: N/A
DataSheet: MASMCJ110A datasheetMASMCJ110A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
157 +: $ 4.08974
Stock 1000Can Ship Immediately
$ 4.5
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 8.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MASMCJ110A is a transient voltage suppressor diode which is widely used in many fields. It is a chip-like device that protect sensitive circuitry from overvoltage transients and associated damage or interference. The MASMCJ110A has several components that make up the diode, including the PN junction, multiple transistors, base electrodes, and diodes. There are two primary types of MASMCJ110A voltage suppressors. The first is a zener diode designed to regulate current and protect electronic components. The second is a TVS diode designed specifically to protect against transients.The PN junction in the MASMCJ110A is formed by two doped semiconductor layers, one n-type and one p-type. This junction creates a depletion layer in which only a limited number of current carriers, or electrons, can flow. When the applied voltage exceeds a certain value, the depletion layer is forced open and a large current passes through the junction, creating an avalanche breakdown. This process is used to protect sensitive circuitry from excess voltage.The transistors in the MASMCJ110A consist of an emitter, a collector, and a base. The base is the control element, while the emitter and collector are used to control current flow. The combination of the base, emitter, and collector forms a transistor-like structure that amplifies the small transients that occur when voltage is applied. To regulate these transients, a feedback loop between the base and emitter electrodes is used.In addition to the PN junction and transistors, the MASMCJ110A also has several diodes. These diodes, often referred to as “clamping” diodes, are used to limit voltage and protect against overvoltage transients. These diodes are connected in series with the PN junction and the transistors to effectively clip off any transient spikes. This protects the sensitive components from the potential damage such spikes can cause.The main application field of the MASMCJ110A is in computers and other electronic devices. Its ability to protect sensitive components from voltage transients makes it ideal for use in these applications. The MASMCJ110A is also a popular choice for industrial applications, especially in the automotive industry, where high voltage surges or transients can cause significant damage to the system.The working principle of the MASMCJ110A is based on avalanche breakdown. When the voltage rises enough, the depletion layer between the two doped semiconductor layers is forced open. A large current then flows, creating an avalanche breakdown. This effect allows the diode to regulate voltage and protect sensitive components from damage. In addition, the feedback loop between the base and emitter electrodes allow the diode toclip off any voltage transients that occur. The combination of these two processes makes the MASMCJ110A an efficient voltage regulator.In conclusion, the MASMCJ110A is a type of transient voltage suppressor diode, which is used in various applications to protect sensitive circuitry from overvoltage transients. Its components include the PN junction, multiple transistors, base electrodes, and diodes. Its main application field is in computers and other electronic devices, but it is also a popular choice in the automotive industry. The working principle of the MASMCJ110A is based on avalanche breakdown, wherein voltage rises enough to open the depletion layer between two doped semiconductor layers, resulting in a large current and avalanche breakdown. This effect not only regulates voltage, but also provides protection from transient voltage spikes.

The specific data is subject to PDF, and the above content is for reference

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