MASMCJ130CAE3 Allicdata Electronics
Allicdata Part #:

1086-5957-ND

Manufacturer Part#:

MASMCJ130CAE3

Price: $ 4.91
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 130V 209V DO214AB
More Detail: N/A
DataSheet: MASMCJ130CAE3 datasheetMASMCJ130CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
144 +: $ 4.46154
Stock 1000Can Ship Immediately
$ 4.91
Specifications
Voltage - Clamping (Max) @ Ipp: 209V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 7.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 144V
Voltage - Reverse Standoff (Typ): 130V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MASMCJ130CAE3 Application Field and Working Principle

TVS - Diodes, a class of devices used in power switching applications, are widely used in a variety of applications. MASMCJ130CAE3, a type of diode available in a TO-220 package, is an example of one such TVS - diode. This article will discuss its application field and working principle.

Application Field

The MASMCJ130CAE3 diode is used for ESD, EFT and lighting surge protection in AC or DC circuits of electronic equipments, including home appliances, automobiles and personal computers. It is capable of withstanding high surge currents with low voltage gradients. This makes it suitable for use in situations which require high EMI or ESD protection.

The MASMCJ130CAE3 diode can also be used in suppressing the spikes in transient currents caused by inductive loads and capacitive loads. This diode can also be used to suppress the surges of reverse polarity, generated during microelectronic applications. Additionally, this diode also has high frequency operation with low leakage current, which makes it a suitable choice for applications such as high voltage surge protection.

Working Principle

The MASMCJ130CAE3 diode consists of a reverse-biased p-n junction. This junction acts like a one-way valve and allows current to flow in one direction only. When a voltage above the breakdown voltage is applied, a current will be diverted from the gate through the p-n junction, thereby resulting in the suppression of any surges. This is known as the breakdown phenomenon.

The operating voltage of the MASMCJ130CAE3 is between 5V and 25V. When a voltage lower than 5V is applied, the diode will not be able to conduct current. Similarly, when a voltage higher than 25V is applied, the diode will begin to conduct current, resulting in the suppression of any surges.

In order to prevent the diode from being damaged by current or voltage peaks, the MASMCJ130CAE3 uses a shielding layer to protect the actual diode material from overstressing. This shielding layer helps to extend the life of the diode and reduce the possibility of current or voltage peaks damaging the diode material.

Conclusion

The MASMCJ130CAE3 diode is a useful component for applications which require EMI or ESD protection. It has a wide range of operating voltages and is capable of withstanding high surge currents. Additionally, it features a shielding layer to help extend the life of the diode and reduce the possibility of current or voltage peaks damaging the diode material. Therefore, this type of diode is a suitable choice for applications such as high voltage surge protection.

The specific data is subject to PDF, and the above content is for reference

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