MASMCJ20CA Allicdata Electronics
Allicdata Part #:

1086-5996-ND

Manufacturer Part#:

MASMCJ20CA

Price: $ 4.91
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 20V 32.4V DO214AB
More Detail: N/A
DataSheet: MASMCJ20CA datasheetMASMCJ20CA Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
144 +: $ 4.46154
Stock 1000Can Ship Immediately
$ 4.91
Specifications
Voltage - Clamping (Max) @ Ipp: 32.4V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 46.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 22.2V
Voltage - Reverse Standoff (Typ): 20V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MASMCJ20CA is a silicon avalanche breakdown diode, which is also categorized as Transient Voltage Suppressor (TVS) diode. It is commonly used in circuit protection and signal conditioning applications, and its working principle is based on the avalanche breakdown of p-n junctions.

A p-n junction diode is formed by connecting a heavily doped p-type semiconductor with a heavily doped n-type semiconductor. There is a capacitance at the junction of the p-n junction and the two materials are separated by a thin intrinsic layer. When the p and n materials are connected together, an electric field is formed in the intrinsic layer and a barrier voltage is established to balance the electric field. This electric field induces a current and the voltage increases. When the electric field intensity at the junction exceeds a certain value, called critical avalanche voltage, the diode will suddenly conduct and the current will significantly increase due to the avalanche breakdown of the junction.

The MASMCJ20CA diode is essentially an avalanche diode. It has a small junction capacitance, which makes it suitable for high frequency signal processing and conditioning. It also has a robust design which enables excellent thermal properties and higher reliability even in harsh environments. The device can be used for a variety of applications such as protecting against ESD and EMI, and filtering out noise from signals.

The MASMCJ20CA is a low-voltage avalanche breakdown diode, which features a maximum peak pulse current of 20A and a peak pulse power of 320W at 10/1000 microsecond pulse. The maximum breakdown voltage on this device is 6.8V. It also features a low-capacitance junction which allows for faster switching and response durations. The device has a low power consumption, making it suitable for low-power applications such as digital logic and low-voltage microcontrollers.

The application field of the MASMCJ20CA is wide and includes the protection of sensitive electronics from ESD and EMI, as well as the noise reduction of large-scale signals from radio-frequency interference. In addition, the diode can be used for surge protection in automotive, industrial, and telecommunications applications. The device is also suitable for protection of sensitive circuits from high-speed logic switching, and can be used for data transmission line termination.

In summary, the MASMCJ20CA is a silicon avalanche breakdown diode, which falls into the Transient Voltage Suppressor (TVS) diode category. It has an excellent response to high-frequency signals, and can be used in a variety of protection and signal conditioning applications. Its working principle is based on the avalanche breakdown of p-n junctions, which is characterized by a sudden increase in current due to a critical avalanche voltage.

The specific data is subject to PDF, and the above content is for reference

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