MASMLG64AE3 Circuit Protection |
|
| Allicdata Part #: | 1086-6341-ND |
| Manufacturer Part#: |
MASMLG64AE3 |
| Price: | $ 5.96 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 64V 103V DO215AB |
| More Detail: | N/A |
| DataSheet: | MASMLG64AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 119 +: | $ 5.41027 |
| Voltage - Clamping (Max) @ Ipp: | 103V |
| Supplier Device Package: | SMLG (DO-215AB) |
| Package / Case: | DO-215AB, SMC Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 3000W (3kW) |
| Current - Peak Pulse (10/1000µs): | 29.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 71.1V |
| Voltage - Reverse Standoff (Typ): | 64V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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MASMLG64AE3 is a unidirectional TVS diode module used for transient voltage protection. It is composed of a planar type avalanche diode and an EMI filter. The primary element of this protection module is the Zener diode. This diode can divide and propel the excessive transient voltage, limiting surges to acceptable levels and protecting the downstream circuits. It can be used to protect a variety of circuits, including DSL systems, Ethernet networks, 10/100/1000 base-T computer networks, fax, modems, and telephone systems. The MASMLG64AE3 module has two epoxy encapsulated components and a metalized resistor contained in a metalized copper oxide ceramic base. With a low-capacitance and ESD protection, the device is suitable for EMC designs without EMI filter.
The working principle of MASMLG64AE3 is based on Zener breakdown and avalanche breakdown mechanisms. Zener breakdown occurs when a voltage level greater than the Zener breakdown voltage is applied to the diode. This voltage dissipates through the diode and is transferred to the secondary element of the protection circuit, usually a resistor. Avalanche breakdown occurs when large currents pass through the diode. This causes current to flow through the diode in a quasi-exponential fashion, limiting the voltage across the diode. This reduces the large transient voltage and allows the diode to dissipate the excess energy. The resistor absorbs the energy and dissipates it as heat. This ensures that the transient voltage is limited to acceptable levels.
In order to ensure that the MASMLG64AE3 module is able to dissipate the excess energy safely, the circuit must include a No.14 solid wire to protect the internal components from heat. The circuit must also include a properly rated and designed resistor to ensure that the device is sufficiently protected from overcurrents. The resistor must be of a low-inductance type so that the high di/dt of the surge does not damage the device. The resistor must also be able to dissipate the absorbed energy taken from the transient voltage.
In summary, MASMLG64AE3 is a unidirectional TVS diode module best suited for EMC designs. It is composed of a planar type avalanche diode and an EMI filter, coupled with a metalized resistor contained in a metalized copper oxide ceramic base. The working principle of the module relies on the Zener breakdown and avalanche breakdown mechanisms, in combination with a No.14 solid wire and a properly rated and designed low-inductance resistor, to provide transient voltage protection. The module is suitable for protecting a variety of circuits, including DSL systems, Ethernet networks, 10/100/1000 base-T computer networks, fax, modems, and telephone systems.
The specific data is subject to PDF, and the above content is for reference
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| MASMBG10CAE3 | Microsemi Co... | 4.0 $ | 1000 | TVS DIODE 10V 17V DO215AA |
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| MASMLJ100AE3 | Microsemi Co... | 5.78 $ | 1000 | TVS DIODE 100V 162V DO214... |
| MASMLJ51CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMLJ8.0CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMLJ8.5CA | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMCJLCE24A | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
| MASMCJLCE30AE3 | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMCGLCE11A | Microsemi Co... | 6.47 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MASMCGLCE16AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MASMCGLCE54AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MASMBJ30A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMBJ64AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 64V 103V DO214A... |
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| MASMLG160CAE3 | Microsemi Co... | 6.39 $ | 1000 | TVS DIODE 160V 259V DO215... |
| MASMCGLCE15A | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
| MASMBJ8.0CA | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMBJ51CAE3 | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
| MASMBG170A | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 170V 275V DO215... |
| MASMCG78A | Microsemi Co... | 4.67 $ | 1000 | TVS DIODE 78V 126V DO215A... |
| MASMCJ17CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
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MASMLG64AE3 Datasheet/PDF