MASMLJ110CAE3 Circuit Protection |
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| Allicdata Part #: | 1086-6395-ND |
| Manufacturer Part#: |
MASMLJ110CAE3 |
| Price: | $ 6.21 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 110V 177V DO214AB |
| More Detail: | N/A |
| DataSheet: | MASMLJ110CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 114 +: | $ 5.64105 |
| Voltage - Clamping (Max) @ Ipp: | 177V |
| Supplier Device Package: | DO-214AB |
| Package / Case: | DO-214AB, SMC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 3000W (3kW) |
| Current - Peak Pulse (10/1000µs): | 16.8A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 122V |
| Voltage - Reverse Standoff (Typ): | 110V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes
The MASMLJ110CAE3 is an electrostatic discharge (ESD) protection diode used to protect electronic components from the damaging effects of static discharges. It is designed to work with voltages ranging from +15 V to -15 V and can handle discharges up to 30 Amps.
The MASMLJ110CAE3 is an inorganic, non-volatile, and low-cost ESD protection diode with a high breakdown voltage tolerance. The diode consists of two p-type material layers and one n-type material layer. It is connected to the sensitive circuitry of an electronic component through the pins. The diode is usually integrated with other components on an IC or board due to its small size.
Application Field
The MASMLJ110CAE3 is best suited for the safeguarding of components in data communication ports such as USB, Ethernet, SATA, and others. It can also be used to protect components in automotive electronics, medical electronics, mission-critical equipment, and many other applications.
Working Principle
The MASMLJ110CAE3 is designed to maintain high electrical breakdown strength while dissipating very little parasitic capacitance and resistance. The diode acts as a temporary resistor, and it initiates when a static charge tries to pass through the diode from the high voltage side towards the low voltage side. When the applied voltage reaches the diode’s breakdown voltage, the diode automatically conducts and limits the voltage across the device to its breakdown voltage. In the process, the excess static charge is dissipated into the ground.
The breakdown voltage of the MASMLJ110CAE3 is adjustable to between 10 and 27 V. This allows it to be tailored to the required specifications for the given application. The diode has a low maximum leakage current of 60 nA and low maximum capacitance of 5.5 pF; both of which ensure that the diode has minimal interference during normal operation of the device.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MASMBJ36CA/TR | Microsemi Co... | 4.17 $ | 1000 | HI REL TVS |
| MASMCJ110AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 110V 177V DO214... |
| MASMCJ70AE3 | Microsemi Co... | 4.5 $ | 1000 | TVS DIODE 70V 113V DO214A... |
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| MASMLJ51CAE3 | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
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| MASMLJ8.5CA | Microsemi Co... | 6.21 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMCJLCE24A | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
| MASMCJLCE30AE3 | Microsemi Co... | 6.32 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMCGLCE11A | Microsemi Co... | 6.47 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MASMCGLCE16AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 16V 26V DO215AB |
| MASMCGLCE54AE3 | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MASMBJ30A | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
| MASMBJ64AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 64V 103V DO214A... |
| MASMBJ8.5AE3 | Microsemi Co... | 3.93 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MASMBG120AE3 | Microsemi Co... | 4.31 $ | 1000 | TVS DIODE 120V 193V DO215... |
| MASMCJ22CAE3 | Microsemi Co... | 4.91 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| MASMLG7.0AE3 | Microsemi Co... | 5.96 $ | 1000 | TVS DIODE 7V 12V DO215AB |
| MASMLG160CAE3 | Microsemi Co... | 6.39 $ | 1000 | TVS DIODE 160V 259V DO215... |
| MASMCGLCE15A | Microsemi Co... | 6.52 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
| MASMBJ8.0CA | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MASMBJ51CAE3 | Microsemi Co... | 4.24 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
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MASMLJ110CAE3 Datasheet/PDF