MASMLJ45AE3 Allicdata Electronics
Allicdata Part #:

1086-6489-ND

Manufacturer Part#:

MASMLJ45AE3

Price: $ 5.78
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V DO214AB
More Detail: N/A
DataSheet: MASMLJ45AE3 datasheetMASMLJ45AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
122 +: $ 5.25642
Stock 1000Can Ship Immediately
$ 5.78
Specifications
Voltage - Clamping (Max) @ Ipp: 72.7V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 41.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MASMLJ45AE3 TVS - Diodes Application Field and Working Principle

The MASMLJ45AE3 device is part of the Transient Voltage Suppressor Diodes (TVS-Diodes) family, designed to protect sensitive electronics circuits against electro-static discharge (ESD) and voltage surges. Easy to install and highly reliable, the MASMLJ45AE3 provides an excellent level of protection against destructive transient voltage events, making it the perfect choice for applications in telecommunications, consumer electronics, healthcare, industrial, and automotive.

TVS-Diodes are specifically designed to protect downstream circuitry from damaging transient events caused by electrostatic discharge (ESD). They protect circuits from high voltage transients created by lightning, vehicular electrical contact and electro-mechanical contact of various kinds.ANode and cathodeWhen an electrical circuit is struck by a transient voltage, the TVS-Diode absorbs and dissipates the energy of the event, clamping the voltage of the circuit to a safe operating level. The MASMLJ45AE3 gate turns on and begins to conduct at a breakdown voltage level, clamping the maximum voltage of the circuit to the device\'s reverse breakdown voltage. The gate is designed to have an extremely fast response time, providing maximum protection against ESD.

The MASMLJ45AE3 TVS-Diode consists of an anode and cathode, connected by a p-n junction. The anode and cathode determine the polarity of the TVS-Diode, and the TVS-Diode will only clamp voltage when the anode and cathode are connected to the correct polarity. When the anode is connected to a higher voltage than the cathode, the device is forward biased and will conduct current.

The MASMLJ45AE3 also contains a built-in Zener Diode structure, which provides breakdown clamp protection. The diode structure is designed with a low capacitance for fast response times, which helps to protect the circuit\'s sensitive components. When the voltage at the anode reaches the breakdown voltage, the diode starts to conduct and clamps the voltage to the breakdown voltage level.

The MASMLJ45AE3 also features an integrated diode that absorbs the static energy generated during the voltage clop events. This diode absorbs the static energy and prevents it from damaging the sensitive components of the circuit.

The MASMLJ45AE3 TVS-Diode is an excellent choice for protecting sensitive electronics circuits from ESD and voltage surges, and it is widely used in telecommunications, consumer electronics, healthcare, industrial, and automotive applications. The device\'s fast response time and integrated diode structure provide reliable protection from voltage transients.

The specific data is subject to PDF, and the above content is for reference

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