MASMLJ48AE3 Allicdata Electronics
Allicdata Part #:

1086-6493-ND

Manufacturer Part#:

MASMLJ48AE3

Price: $ 5.78
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 48V 77.4V DO214AB
More Detail: N/A
DataSheet: MASMLJ48AE3 datasheetMASMLJ48AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
122 +: $ 5.25642
Stock 1000Can Ship Immediately
$ 5.78
Specifications
Voltage - Clamping (Max) @ Ipp: 77.4V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 38.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 53.3V
Voltage - Reverse Standoff (Typ): 48V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MASMLJ48AE3 Application Field and Working Principle

TVS (thyristor surge protection) diodes, also known as surge suppression diodes, have recently become one of the most important components in the electronic hardware industry, used in a variety of very applications. The MASMLJ48AE3 is one of the most popular of these TVS diode, because of its excellent performance and quality.

MASMLJ48AE3 Application Field

The MASMLJ48AE3 TVS diode is used in a variety of applications, including automotive, consumer electronics, industrial, and medical electronics. It can be used to provide protection from electrical overstress (EOS) in both AC and DC applications and is also certified for ISO-Quality Compliant operation. This includes automotive applications, where the diode can provide protection against events such as vehicle side-impact protection or lightning strikes.

The diode can also be used in consumer electronics products, such as mobile phones, tablets, and laptop computers, where it can provide protection against ESD, EFT, and EMI/RFI. It is also used in a variety of industrial applications, including industrial control systems and equipment.

The diode is also used in medical electronics, such as ventilators and patient monitoring systems, where it can provide protection against electrical shocks, ESD, EFT, and EMI/RFI.

MASMLJ48AE3 Working Principle

The working principle of MASMLJ48AE3 is based on the requirement for fast response time, which allows it to protect against ESD, EFT, and EMI/RFI in an efficient manner. It relies on the voltage dependent properties of a reverse biased PN-junction diode, operating in its avalanche breakdown region.

When the voltage across the diode surpasses its breakdown voltage, the diode starts to conduct a reverse current, thereby diverting the transient energy away from the protected circuitry. This clamps the voltage at the breakdown voltage level, thus preventing damage to the system.

The avalanche breakdown voltage of a MASMLJ48AE3 diode depends on its device parameters, such as the breakdown voltage, the junction temperature, and the leakage current. The diode also features additional protection capabilities, such as transient voltage suppression (TVS) and transient peak pulse current suppression (TPCS) capabilities, which can further improve protection effectiveness.

The advantages of the MASMLJ48AE3 diode include fast response time, low forward voltage drop, high peak surge current capability, and high surge withstand capability. All of these features make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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