MASW-004100-11930W Allicdata Electronics
Allicdata Part #:

1465-1104-ND

Manufacturer Part#:

MASW-004100-11930W

Price: $ 12.33
Product Category:

RF/IF and RFID

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE CHIP HMIC SP4T 2WATT
More Detail: RF Switch IC General Purpose SP4T 26GHz
DataSheet: MASW-004100-11930W datasheetMASW-004100-11930W Datasheet/PDF
Quantity: 100
50 +: $ 11.21340
100 +: $ 10.42180
250 +: $ 9.56438
500 +: $ 9.10259
Stock 100Can Ship Immediately
$ 12.33
Specifications
Test Frequency: 20GHz
Supplier Device Package: --
Package / Case: --
Operating Temperature: -65°C ~ 125°C
Voltage - Supply: --
Impedance: --
Features: --
IIP3: --
P1dB: --
Series: HMIC™
Insertion Loss: 0.9dB
Isolation: 34dB
Frequency Range: 50MHz ~ 26GHz
Circuit: SP4T
Topology: Reflective
RF Type: General Purpose
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF switches are types of electronic components which are used in a variety of applications such as antenna tuning, signal routing, radio frequency control, and so on. The MASW-004100-11930W series of RF switches are a highly versatile portfolio of radio frequency switching products designed to simplify common RF switching application needs.

Application Field

The MASW-004100-11930W series can be used in any application that requires radio frequency switching. This includes communications, instrumentation test and measurement, and military applications, just to name a few. It is also suitable for use as a low-loss RF switch for selectable antenna, routing, sample-and-hold, pre-selection, and level control applications.

Working Principle

The working principle behind the MASW-004100-11930W series of RF switches is what is known as a “transition state metal oxide semiconductor field-effect transistor”(MOSFET). This type of component is able to switch rapidly between two different states, allowing for precise control of the RF signals passing through it. The MOSFET is controlled by an external driver circuit, which can be tailored to any specific application.

The MASW-004100-11930W series of RF switches offer a wide range of performance levels, from low RF leakage to ultra-high resistance to externally applied voltage. They also feature a very high linearity, low insertion loss, high isolation, fast switching speed, and low power consumption. Overall, the MASW-004100-11930W series of RF switches makes ideal components for any application where precise control of signals at radio frequencies is required.

The specific data is subject to PDF, and the above content is for reference

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