MAX2059ETL+

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The MAX2059ETL+ is an enhancement-mode or field-effect transistor (FET) circuitry that is used in RF Amplifiers. It offers a low component count solution for high linearity and high power gain amplifier designs. Its output and gate bias can be optimized to offer excellent gain and linearity. This part can be used for various applications such as amplifiers, multiplexers, and power management circuits.

The MAX2059ETL+ provides linearity up to 400MHz with a maximum P1dB output of +37dBm. The device also features a noise figure of 3dB at 200MHz. It is the ideal solution for applications involving broadcast and reception of RF signals.

The MAX2059ETL+ requires a single DC supply and has a power supply range from +2V to +14.5V. It offers an output voltage swing of up to +67V and an input voltage range from -2V to +25V. With a supply voltage of +3V, the MAX2059ETL+ provides a maximum power gain of +22dB.

The MAX2059ETL+ supports the use of 1 or 2 cascoded transistors. This allows the device to be used for applications with higher input frequencies and higher power demands due to the additional current stability offered by the cascode configuration.

The MAX2059ETL+ can operate in two different modes depending on the gate bias applied. In the applied gate bias is in the negative, the device will work in enhancement-mode, and in the applied gate bias is in positive, the device will switch to depletion-mode operation.

In enhancement-mode operation, the device increases the drain current associated with the applied gate bias. This permits the device to be used in its greatest gain configuration. The gain tends to remain linear up to output power levels of +37dBm.

In depletion-mode operation, the voltage across the gate and drain is negative and increases the driving current associated with the gate-to-source voltage applied. This results in lower distortion levels compared to enhancement-mode operation, and the device’s performance at higher power levels will remain linear.

The MAX2059ETL+ can also be used in its common-gate configuration. This allows for the reduction of the number of components typically needed in common-gate designs, resulting in a more compact and cost-effective solution. In common-gate operation, the device operates as a low-gain amplifier with excellent linearity and low distortion.

The MAX2059ETL+ is a high-performance field-effect transistor (FET) intended for use in RF amplifiers. The device has been optimized for maximum linearity and gain with a power supply range from +2V to +14.5V. It offers excellent gain and linearity in both enhancement-mode and depleted-mode operation, as well as in common-gate configuration, with a maximum output P1dB of +37dBm. This part is ideal for any RF amplifier design, providing a compact and cost-effective solution.

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