Allicdata Part #: | MAX2601ESA-T-ND |
Manufacturer Part#: |
MAX2601ESA-T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Maxim Integrated |
Short Description: | TRANS RF NPN 900MHZ 15V 8SOIC |
More Detail: | RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount... |
DataSheet: | MAX2601ESA-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1GHz |
Noise Figure (dB Typ @ f): | 3.3dB @ 836MHz |
Gain: | 11.6dB |
Power - Max: | 6.4W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 250mA, 3V |
Current - Collector (Ic) (Max): | 1.2A |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package: | 8-SOIC-EP |
Base Part Number: | MAX2601 |
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MAX2601ESA-T Application Field and Working Principle
The MAX2601ESA-T is a high-performance RF transistor manufactured by Maxim Integrated. It is part of their increasingly popular HiperFET line of high-power, high-speed transistors. It is popular due to its temperature-compensated biasing, which provides reliable operation over a wide temperature range, making it suitable for use in applications that require high power RF performance, such as cellular base stations, GPS and other wireless communications systems.
The MAX2601ESA-T is a bipolar junction transistor (BJT) primarily designed for use in high performance Radio Frequency (RF) applications, such as radio transmitters, cell phones, and wireless networks. This transistor has a wide band gap, which makes it suitable for devices operating at higher frequencies. It also has a low noise level, making it ideal for applications that require low-noise operation. Additionally, the MAX2601ESA-T has been designed to provide reliable operation over a wide temperature range.
At the heart of the MAX2601ESA-T device is a collector-base junction designed to provide high-current conduction capability. This junction is driven by a voltage difference applied between its collector and base terminals. When the base voltage is increased, the junction begins to conduct, allowing current to flow from the collector to the emitter. The current that is flowing is controlled by the voltage applied to the emitter terminal.
The MAX2601ESA-T includes a temperature-compensated biasing scheme, which compensates for the temperature-induced changes in the current-voltage characteristics of the transistor. This ensures reliable operation even when the temperature of the surrounding environment varies. Additionally, the MAX2601ESA-T includes a built-in diode protection to safeguard against short-circuiting.
The MAX2601ESA-T is designed for use in a wide range of RF applications, such as cellular base stations, GPS and other wireless communications systems. It is reliable, has a wide temperature range, and can provide a high-power output. The MAX2601ESA-T is also well-suited for other high-performance RF applications, such as automotive systems and industrial communications systems.
Overall, the MAX2601ESA-T is a high-performance, temperature-compensated RF transistor suitable for use in a variety of RF applications. It has a wide temperature range and is able to provide a high-power output. Its low-noise level makes it ideal for applications that require low-noise operation. Additionally, the MAX2601ESA-T is well-suited for use in automotive systems and industrial communication systems.
The specific data is subject to PDF, and the above content is for reference
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