Allicdata Part #: | MAX2602ESA+T-ND |
Manufacturer Part#: |
MAX2602ESA+T |
Price: | $ 1.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Maxim Integrated |
Short Description: | TRANS RF NPN 900MHZ 15V 8SOIC |
More Detail: | RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount... |
DataSheet: | MAX2602ESA+T Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.70727 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1GHz |
Noise Figure (dB Typ @ f): | 3.3dB @ 836MHz |
Gain: | 11.6dB |
Power - Max: | 6.4W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 250mA, 3V |
Current - Collector (Ic) (Max): | 1.2A |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package: | 8-SOIC-EP |
Base Part Number: | MAX2602 |
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The MAX2602ESA+T is an efficient, small-sized, reliable, high-performance and multifunctional bipolar Junction Transistor (BJT). The MAX2602ESA+T is a high-speed Radio Frequency (RF) transistor specifically designed for use in consumer and telecom applications. It has a high-gain, high-speed switching capability and has been optimized for use in frequency-sensitive applications such as Doppler Radar, pulse modulators, high-speed switching, low-noise amplifiers and signal buffering.
The MAX2602ESA+T features a low capacitance bipolar transistor that is optimized for high-speed RF performance. It offers a high gain of 40 dB with a maximum operating frequency of 8 GHz. It has low power consumption and can be used with a minimum of 12 V power supply voltage. Additionally, it supports a wide range of operating temperature ranges from -40 to +85 degrees Celsius and also complies with ESD immunity levels. The MAX2602ESA+T also offers excellent thermal performance characteristics and delivers good RF gain even at lower temperatures.
The MAX2602ESA+T is specifically tailored for use in devices that require high-speed switching and low-noise amplification. Its wide frequency range makes it suitable for use in Doppler Radar, pulse modulators and other frequency-sensitive applications. The device also offers excellent linearity and noise reduction properties, which makes it a great choice for applications that require precise signal buffering and low-noise input output stages. Furthermore, the device is designed to withstand harsh environmental conditions, making it suitable for use in rugged applications such as satellite communications and other high-altitude applications.
The MAX2602ESA+T works by using an internal active region that is controlled by a gate voltage. The gate voltage can be applied to the transistor in order to turn it on or off, depending on the application. The gate voltage can be adjusted in order to achieve the desired level of switching performance and linearity. The device also features a wide dynamic range in terms of its linearity properties and is capable of handling large input signals without any degradation. Additionally, the device has a low-input and low-output-resistance, ensuring consistent high-performance over an extended period of time.
In summary, the MAX2602ESA+T is a high-performance, small-sized RF transistor that is specifically designed for applications that require reliable, high-speed switching and low-noise amplification. It offers a wide frequency range of operation that makes it suitable for use in Doppler Radar, pulse modulators and other frequency-sensitive applications. It is designed to withstand harsh environments and is suitable for use in harsh and rugged applications. Finally, it offers excellent thermal performance and is capable of delivering good RF gain even at much lower temperatures.
The specific data is subject to PDF, and the above content is for reference
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