MAX4512CSE+T

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The MAX4512CSE+T is a single–pole, double–throw (SPDT) analog switch with integrated tiny, low power drainage–gate transistors for biasing external field effect transistors (FETs). It provides an ultra low on resistance of 15Ω at +4.5V and a very low Q gdss of 2nC. This makes it an ideal device for applications like power management systems, where a very low power and low on resistance switching element is needed.

The MAX4512CSE+T switch is designed to handle signals up to 1A and 0.85Vrms. Its ±1µVoffset voltage, combined with 30nV/°C temperature drift helps maintain signal integrity during switching. A unique feature of the MAX4512CSE+T is its RF absorbing substrate, which helps to reduce the inductive effects of nearby switching edges. This helps to reduce electromagnetic interference (EMI) ensuring better signal integrity.

The MAX4512CSE+T device operates in two modes, an active mode and an inactive mode. In active mode, the analog switch conducts and the transistor drains current. In inactive mode, the analog switch is open and no current is drawn by the transistor. The MAX4512CSE+T also has a power down capability that allows the switch to be powered down when not in use.

The MAX4512CSE+T can be used in a variety of applications including power management systems, multiplexers, demultiplexers, and analog switches. In a power management system, the MAX4512CSE+T can be used to switch between two power sources or to switch between low and high power signals. The low on-resistance ensures a low power loss when switching. In multiplexers and demultiplexers, the MAX4512CSE+T can be used to switch between different signals. It can also be used as an analog switch for switching signals up to 1A and 0.85Vrms.

In summary, the MAX4512CSE+T is an ideal choice for applications requiring low power and low on-resistance switching. It is suitable for power management, multiplexing, demultiplexing, and analog switch applications. It has an ultra low on-resistance of 15Ω at +4.5V and a low Q gdss of 2nC. It has a ±1µVoffset voltage, 30nV/°C temperature drift and a RF absorbing substrate. Its power down capability is also an advantage allowing the switch to be powered down when not in use.

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