MAZ30820ML Allicdata Electronics

MAZ30820ML Discrete Semiconductor Products

Allicdata Part #:

MAZ30820MLTR-ND

Manufacturer Part#:

MAZ30820ML

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ZENER 8.2V 200MW MINI3
More Detail: Zener Diode 8.2V 200mW ±6% Surface Mount Mini3-G1
DataSheet: MAZ30820ML datasheetMAZ30820ML Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Base Part Number: MAZ308V2
Description

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The MAZ30820ML is a single Zener diode, which is typically used for voltage regulation and protection against over-voltage. It is a special type of diode that can prevent a voltage from rising beyond a certain threshold and helps maintain a stable operating voltage. The typical reverse broken down voltage for a MAZ30820ML diode is 11.7V.

The MAZ30820ML diode is available in an SOD-123FL package, which allows for a wide range of applications that require very low profile and surface mount designs. This diode can also operate at a wide range of temperatures, from -55°C to 125°C, which makes it suitable for a variety of environmental conditions. As such, the MAZ30820ML is ideal for use in a variety of applications, such as automotive electronics, power supplies, and data acquisition systems.

The function of the MAZ30820ML is dependent on its semiconductor junction, which can be best explained by the p-n junction diagram. The p-n junction is a semiconductor structure which consists of two semiconductor materials, one p-doped and one n-doped, which are separated by a thin depletion region. When a reverse voltage is applied to the diode, the electric field within the depletion region increases, increasing the junction resistance and reducing the flow of current. This allows the diode to control the voltage by limiting the output voltage to a maximum level.

Moreover, the MAZ30820ML diode also has a low power consumption, which is desirable for applications where power consumption needs to be minimized. This is due to the fact that the operation of the diode only requires a very small amount of current. Additionally, the diode is capable of handling high current applications, with a maximum power dissipation rating of 500mW, making it well-suited for applications where high power is required. Furthermore, the diode has a high stability and low leakage current (1μA max), which helps to protect against short circuits and surges. Lastly, the MAZ30820ML is also capable of withstanding extreme temperatures, making it resilient and suitable for use in harsh environments.

In summary, the MAZ30820ML is a single Zener diode, which is suitable for a wide range of applications such as automotive electronics, power supplies, and data acquisition systems. It has a reverse broke down voltage of 11.7V and provides effective voltage regulation and protection against over-voltage. The MAZ30820ML is available in an SOD-123FL package, which allows for design flexibility and low profile implementations. The diode has a low power consumption, a high power dissipation rating and a high stability, making it an ideal choice for use in applications where power efficiency, reliability, and temperature control are critical.

The specific data is subject to PDF, and the above content is for reference

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