MAZ8082GML Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	8.2V
Tolerance:	±6%
Power - Max:	150mW
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 5V
Voltage - Forward (Vf) (Max) @ If:	1V @ 10mA
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	SC-90, SOD-323F
Supplier Device Package:	SMini2-F3
Base Part Number:	MAZ808V2

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MAZ8082GML Application Field and Working Principle

The MAZ8082GML is a device classified under diodes, zeners and single devices, and is designed and manufactured by Princeton Technology Corporation (PTC). It is a low-profile, high-performance zener diode device that is ideal for use in a variety of medium and high voltage applications. In this article, we will discuss the application fields of the MAZ8082GML as well as its working principle.

Application Fields

The MAZ8082GML is a high-voltage diode that is particularly suitable for applications such as high voltage inverters and DC-DC converters. The device’s small package size makes it ideal for use in applications with limited space, such as in high-density printed circuit boards.The MAZ8082GML can also be used in high-voltage circuit breakers. This makes the device an ideal choice for applications such as electric power distribution systems and power transformers, where it is essential to provide a low-inductance, fast-acting, and high-dynamic response circuit breaker.The device is also suitable for use in other high-voltage and high-current applications such as photovoltaic inverters and motor drives. Furthermore, it can be used in various telecommunications and industrial automation systems, where reliable and fast response is important.

Working Principle

The MAZ8082GML is a high-voltage zener diode that utilizes a breakdown voltage of up to 880 volts. As current passes through the device, electrons are able to move freely on either side of the device. This creates a breakdown voltage, where the electrons are accelerated at a certain speed across the gap created by the device.As electrons cross the gap, they decelerate and recombine, creating an avalanche effect that further increases the potential across the gap. This potential increases until it reaches the breakdown voltage of the diode. At this point, the diode ceases to allow current to pass through it, but allows the electrons to recombine.Once the electrons have recombined, the device is able to reset itself and allow current to pass through once again. This process can be repeated indefinitely, making the MAZ8082GML an ideal choice for a variety of high-voltage applications.

Conclusion

The MAZ8082GML is an excellent choice for a variety of high-voltage applications. Its small package size makes it suitable for high-density printed circuit boards, and its high breakdown voltage makes it ideal for use in high-voltage circuit breakers, inverters and switches. The device’s working principle consists of electrons being accelerated across a gap, recombining and then resetting the device, making it able to repeat the process indefinitely.

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