
Allicdata Part #: | MBD301GOS-ND |
Manufacturer Part#: |
MBD301G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY DET/SW 30V TO92-2 |
More Detail: | RF Diode Schottky - Single 30V 280mW TO-92 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 30V |
Capacitance @ Vr, F: | 1.5pF @ 15V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 280mW |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Package / Case: | TO-226-2, TO-92-2 (TO-226AC) |
Supplier Device Package: | TO-92 |
Description
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MBD301G Application Field and Working Principle
The MBD301G is a N-type Schottky mixer/detector diode from ON Semiconductor, known for its high-frequency performance. It is part of an expanding portfolio of solutions from ON Semiconductor’s Power Transistor Division that meets the rapidly increasing requirements of today\'s telecommunications, aerospace and defense markets.This diode rightfully belongs to the RF diodes, mostly because it meets the requirements of various designs, such as those related to high frequency mixing, detection, and signal mixing. This diode can also be used for pulse modulation and sample/hold applications. Thanks to its small size and package flexibility, it can be used in high-end designs that need to conserve board space. The MBD301G is a Schottky diode with a 2.6 dB NF and a low-noise figure of 0.94 dB. It has an excellent flat frequency and temperature response, making it suitable for high frequency operation. It’s also very power efficient, consuming as little as 0.5 mA of current. With a low reverse-bias operation, the MBD301G is capable of handling up to 20 RF frequencies.The device\'s working principle is based on the fact that the MBD301G, as a Schottky diode, is capable of conducting a current in the forward direction, but not in the reverse direction. This means that when a voltage is applied across the diode, it only allows current to flow from the positive to the negative, allowing the MBD301G to act as a mixer and a detector for RF signals.By looking at the characteristics of the MBD301G, we can see why it is so well-suited for the RF diodes market. It offers a wide frequency range, a low-noise figure, and low current consumption, making it ideal for applications such as pulse modulation, sample/hold functions, and signal mixing. Its small size and package flexibility also make it suitable for designs that need to conserve board space. Overall, the MBD301G is an excellent device for the RF diodes market, and a great solution for designs that require high performance, low power consumption, and a wide frequency range. It’s rugged and reliable, making it an ideal choice for extreme environments, while its small size and package flexibility make it a great choice for designs that need to conserve board space.The specific data is subject to PDF, and the above content is for reference
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