Allicdata Part #: | MBD701GOS-ND |
Manufacturer Part#: |
MBD701G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY DET/SW 70V TO92-2 |
More Detail: | RF Diode Schottky - Single 70V 280mW TO-92 |
DataSheet: | MBD701G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 70V |
Capacitance @ Vr, F: | 1pF @ 20V, 1MHz |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 280mW |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Package / Case: | TO-226-2, TO-92-2 (TO-226AC) |
Supplier Device Package: | TO-92 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are electrical components that control the direction of the flow of current in a circuit. RF diodes, also known as radio frequency diodes, are electronic components that control the flow of radio frequencies (RF) in circuits. The MBD701G is a single-plated RF diode designed for general purpose RF detection and rectification. In this article, we examine the application field of MBD701G and its working principle.
The MBD701G is a small silicon planar RF diode, and its unique design allows for maximum RF detection and rectification in low voltage applications. Its small size and low requirements for voltage, current and power make it an ideal choice for a variety of applications including digital wireless communication, broadband wireless communication, satellite television systems, automotive radars, and radio communications.
The MBD701G features a low junction capacitance and a low reverse leakage current, which helps optimize its performance in demanding RF circuitry. In addition, the MBD701G has a wide operating temperature range of -55˚C to +150˚C, and its miniature package is designed to provide superior heat dissipation capacity.
The working principle of the MBD701G involves a pn-junction diode, which is composed of two differently doped semiconductor regions that are arranged in opposition to one another. When the diode is forward biased, the p-type semiconductor and the n-type semiconductor form a region where there is an overlap of the charge carriers called the depletion region. This region blocks the flow of current in one direction, allowing it to only pass through in the opposite direction, thus forming a diode.
When placed in an RF circuit, the MBD701G enables the circuit to detect and rectify the radio frequency signals. This is achieved due to the fact that the MBD701G has a low capacitance value, which allows for the RF signal to flow through the diode without causing any distortion. When the RF signal is detected and rectified, its Amplitude Modulation (AM) and Frequency Modulation (FM) components can be analyzed and processed by the circuit.
The MBD701G is an ideal solution for applications that require low power and efficient RF detection and rectification. Thanks to its low junction capacitance, wide operating temperature range, and power-saving features, it is perfect for applications within the digital wireless communication, broadband wireless communication, satellite television systems, automotive radars, and radio communications industries. Furthermore, its miniature size simplifies the design and assembly process, making it a great choice for any RF designer or professional.
The specific data is subject to PDF, and the above content is for reference
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