
Allicdata Part #: | MBR10H100CT-ND |
Manufacturer Part#: |
MBR10H100CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ARRAY SCHOTTKY 100V TO220 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 5A... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 730mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 3.5µA @ 100V |
Operating Temperature - Junction: | 175°C (Max) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | MBR10H100CT |
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The MBR10H100CT component is used in a variety of electronic applications. It is a Rectifier Array usually found in bridge configurations used for high-voltage rectification. This component is designed for use in high-power, full-wave bridge rectification of alternating current at high voltages and current levels. Such uses include but are not limited to motor drives, high-power motor control, voltage conversion, DC/DC converters, and charge pumps.
A typical application of the MBR10H100CT is with a 3-phase full-wave bridge rectifier. The component is used to rectify AC voltages up to 1000V peak. With its high voltage, low forward voltage drop, and low junction-to-case thermal resistance, these components are well suited for motor drives, bridge rectifiers, and power converters.
The component consists of four separate diodes, each with a single paired anode and cathode. The component is designed for use in either polarised or un-polarised circuits. The component has a max forward voltage drop of 1.0V, a maximum repetitive peak reverse voltage of 100V and a max surge peak reverse voltage of 600V. The MBR10H100CT can handle a maximum continuous forward current of 10A. The package dimensions range from 8-10 millimeters depending on the configuration.
The MBR10H100CT is built with an epitaxial silicon planar design, giving it excellent current and temperature characteristics in a variety of applications. The epitaxial layer gives it a lower leakage and faster switching speed compared to other planar designs. The component\'s low junction capacitance makes it suitable for high-frequency applications and its low thermal resistance ensures it will not overheat even when delivering high currents.
The MBR10H100CT operates by passing direct current through the diode, allowing electrons to flow through the anode-cathode junction in one direction and blocking current in the opposite direction. This forward-biased current enables efficient rectification of alternating current, making the component ideal for applications requiring high voltage and current levels. The unique design of the MBR10H100CT makes it well suited to applications such as power converters and rectifiers, as well as motor drives and motor control applications.
The MBR10H100CT is a high-voltage rectifier array component used in a variety of applications. It is typically used in bridge configuration rectifiers and is designed for use with AC voltages up to 1000V peak. The component consists of four separate diodes with paired anode and cathode and is designed for use in either polarised or un-polarised circuits. Its high-voltage, low-forward-voltage drop and low junction-to-case thermal resistance make it well suited for power converters, motor drives, rectifiers and more.
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