MBR16H35-E3/45 Allicdata Electronics
Allicdata Part #:

MBR16H35-E3/45-ND

Manufacturer Part#:

MBR16H35-E3/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY TO-220AC
More Detail: Diode
DataSheet: MBR16H35-E3/45 datasheetMBR16H35-E3/45 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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Diodes are a type of electronic device that allow current to flow in one direction while preventing it from flowing in the opposite direction. Rectifier diodes are used to convert alternating current (AC) to direct current (DC). The MBR16H35-E3/45 is a single rectifier diode with a maximum repetitive peak reverse voltage of 16V and a maximum average forward current of 35A. It is a type of Fast Recovery Rectifier diode, meaning that it has a relatively fast reverse recovery time and is able to operate at high speeds without generating excessive power losses.

The MBR16H35-E3/45 is used in a wide range of applications, including automotive, industrial, and telecom. It is suitable for use as a freewheeling diode in motor control applications, high-efficiency DC-DC converters and switch-mode power supplies, or as a rectifier diode in high-frequency, high-efficiency telecom rectifiers. In addition, it can also be used in high-power switching applications and as a snubber diode in phase control circuits.

The working principle of the MBR16H35-E3/45 is based on the physical property of a diode, which is an electrical junction that allows current to flow in one direction and blocks it from flowing in the opposite direction. The diode is composed of a p-type semiconductor and an n-type semiconductor which are joined together at a single point to create a PN junction. In the case of the MBR16H35-E3/45, there is a short-circuit current flowing from the anode to the cathode when a voltage is applied across the junction in its forward direction. This current flow is known as forward bias and it is the basis for the operation of the diode.

In the reverse direction, however, the junction behaves like an open circuit. This is due to the depletion region formed between the two semiconductors as a result of a built-in electric field caused by the doping of the two materials. The depletion region acts like an impenetrable barrier, preventing any current from flowing through the junction in the reverse direction.

The MBR16H35-E3/45 is a fast recovery rectifier diode, meaning that it has a relatively fast reverse recovery time compared to other rectifier diodes. This is due to the use of a special oxide coating on the diode which drastically reduces the rate of recombination of electrons and holes. In addition, the diode has a low leakage current, which helps reduce power losses in high-frequency applications.

Overall, the MBR16H35-E3/45 is a single rectifier diode with a maximum repetitive peak reverse voltage of 16V and a maximum average forward current of 35A. It is suitable for use in a wide range of applications including automotive, industrial, and telecom, and is a great choice for high-power switching applications and as a snubber diode in phase control circuits.

The specific data is subject to PDF, and the above content is for reference

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