Allicdata Part #: | MBR15100CT-E1-ND |
Manufacturer Part#: |
MBR15100CT-E1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ARRAY SCHOTTKY 100V TO220 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 7.... |
DataSheet: | MBR15100CT-E1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 7.5A |
Voltage - Forward (Vf) (Max) @ If: | 850mV @ 7.5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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MBR15100CT-E1 are discrete, high-speed switch diodes with a Schottky barrier junction operating in a surface-mount package. It is a dual common-cathode Schottky diode that consists of two isolated switch elements. This diode is suitable for low-loss high-speed switching applications, as well as rectifier applications.
This diode is often used in a variety of electronics circuits including power conversion, DC-DC converters, AC-DC converters, power inverters, switch mode power supplies, rectification and voltage regulator circuits. This makes it suitable for various electronic and power applications, such as switching and RF applications.
In addition to its high breakdown voltage, this diode also exhibits good switching characteristics with a ton time less than 10ns, enabling it to switch on and off faster than other conventional diodes. This makes it a good choice for switching applications. The reverse-recovery time of this diode is also very fast, allowing it to maintain a low forward voltage drop over a wide operating temperature range.
The MBR15100CT-E1 is also suitable for frequency- and temperature-dependent rectification applications. When used in a rectifier application, it allows current to flow in only one direction, helping to protect electronic components from reverse voltages and over voltages. The diode’s low power consumption and fast switching speeds make it an ideal choice for high-frequency rectification operations.
The MBR15100CT-E1 has a maximum power dissipated dissipation of 1W, and its maximum reverse voltage is 100V. Its maximum junction temperature is 175°C. The diode is also RoHS compliant and UL rated. This diode can also be used in applications where the operational environment is subjected to low temperature and humidity.
In terms of working principle, the MBR15100CT-E1 is an N-channel Schottky barrier diode. When the forward bias voltage is applied to the anode of the diode, electrons flow through the depletion layer, allowing a continuous current to flow through the diode. As the bias voltage increases, the current increases as well. When the forward bias voltage is reversed, the diode blocks the current in the reverse direction, allowing only the reverse leakage current to flow.
The MBR15100CT-E1 is a robust, reliable and high-performing device that is suitable for a wide range of applications. Its low power consumption, fast switching times and low forward voltage drop make it a great choice for high-speed switching and rectification operations, as well as various electronic and power applications.
The specific data is subject to PDF, and the above content is for reference
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