
Allicdata Part #: | MBR200100CTGN-ND |
Manufacturer Part#: |
MBR200100CT |
Price: | $ 34.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE MODULE 100V 200A 2TOWER |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 20... |
DataSheet: | ![]() |
Quantity: | 1000 |
25 +: | $ 31.37500 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 840mV @ 100A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5mA @ 20V |
Mounting Type: | Chassis Mount |
Package / Case: | Twin Tower |
Supplier Device Package: | Twin Tower |
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The MBR200100CT is a high performance ultrafast power rectifier with an operating current of 200A and a repetitive peak reverse voltage of 100V, making it suitable for a range of demanding applications.
The device has excellent power switching characteristics and is capable of switching frequencies up to 500kHz, enabling higher efficiency in hard switching applications. The low forward voltage drop of the device helps to reduce conduction losses, while its low reverse recovery time and fast demagnetizing time make it an ideal choice for high-frequency, high-efficiency designs.
The MBR200100CT is suitable for a range of wide-band power supply applications such as DC-DC converters, portable devices, automotive, photovoltaic systems, and switch-mode-power-supply designs. The device is also well suited for resonant-mode switching applications, primarily used in various topologies such as LLC, PFC and PWM.
MBR200100CT Working Principle
The MBR200100CT follows the same principle of operation as other rectifier components. The device serves as an electronic switch, capable of conducting current in one direction while blocking current in the opposite direction. Essentially, the device works as a diode when forward biased, while it serves as an open switch when reverse biased. During operation, the MBR200100CT acts as a controller, regulating the current and voltage flow in a circuit.
The device is composed of two parts: the active region and the drift region. The active region is made up of a P-type substrate, a N-type epitaxial layer, and a P-type well. When forward biased, a diode is formed in the active region which allows current to flow from anode to cathode. The current flows through the epitaxial layer, the P-type well and the P-type substrate. During reverse-biased conditions, the electrons of the N-type epitaxial layer and the holes of the P-type well are attracted to each other to form a reverse-biased junction.
When compared to other rectifier components, the MBR200100CT demonstrates excellent power switching characteristics with a very fast switching speed. Furthermore, its reverse recovery time and fast demagnetizing time make it an ideal choice for high-frequency, high-efficiency designs. With excellent power and fast switching speed, the MBR200100CT is ideal for a variety of circuit designs.
Conclusion
The MBR200100CT is an excellent power rectification element, capable of handling high current loads with a fast switching speed. The device has excellent power switching characteristics and is suitable for a range of wide-band power supply applications, such as DC-DC converters, portable devices, automotive, photovoltaic systems, switch-mode-power-supply designs, and resonant-mode switching applications. With its excellent power, fast switching speed, and low forward voltage drop, the MBR200100CT is an ideal choice for a variety of demanding applications.
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