MBR20100CTHC0G

Series:	Automotive, AEC-Q101
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	20A
Voltage - Forward (Vf) (Max) @ If:	950mV @ 20A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 100V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

MBR20100CTHC0G is part of the series of diodes, rectifiers and arrays of components used by power electronic engineers to manage rectification, switching and protection from over-voltages and overcurrents. It is a peer-controlled, surge spike resistance power supply rectifier. The device is a 100V DC input, single P-channel MOSFET with a conduction loss of 4.5V.

Application field

MBR20100CTHC0G is typically used in low voltage, high current applications such as automotive power supplies, power adapters, mobile phone chargers and industrial –medical applications. The device is best-suited for various applications where fast switching and reverse power protection are required. The device has an peak surge current resistance up to 100 amperes, an on-state resistance of 6 milliohms, a rated turn-off time of less than 4 nanoseconds and a minimum turn-off voltage drop of 4.5Volts.

Working principle

MBR20100CTHC0G uses a single P-channel MOSFET to control power supply. The power MOSFET is powered by the voltage at the output of the power supply. When the voltage at the output of the power supply reaches the threshold, the MOSFET is activated by the built-in overvoltage protection structure, switching to the “on” state. As soon as the voltage reaches the thresholds, the MOSFET switches from “on” to “off” state and maintains its low voltage drop state (less than 4.5V). The device also provides protection from overvoltages and overcurrents. At the time of presentation current, the MOSFET is capable of handling peak currents up to 100 amperes. The device is optimized for fast switching and is also able to detect instantaneous over current.

Conclusion

In summary, MBR20100CTHC0G is a single P-channel MOSFET device designed to provide reverse power protection and surge current protection to low voltage, high current application. It provides excellent switch-over speed, low on-state resistance and low minimum turn-off voltage drop. It is an ideal choice for protection and control applications such as automotive power supplies, mobile phone chargers and industrial-medical applications.

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