MBR20H100CT/45 Allicdata Electronics
Allicdata Part #:

MBR20H100CT/45-ND

Manufacturer Part#:

MBR20H100CT/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 100V TO220
More Detail: Diode Array 1 Pair Common Cathode Schottky 100V 10...
DataSheet: MBR20H100CT/45 datasheetMBR20H100CT/45 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: MBR20H100CT
Description

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The MBR20H100CT/45 is an advanced rectifier bridge device used in a wide range of applications. It consists of four independent 100A Schottky rectifiers in a single package, configured in a full-controlled bridge rectifier topology. This rectifier bridge consists of four metal-oxide semiconductor field effect transistors (MOSFET) with a Schottky-diode rectifier. It is designed for use in high-efficiency power supplies, motor controls, and high-speed switching applications.

Application Field of MBR20H100CT/45

The MBR20H100CT/45 is utilized in many different applications, including motor control, telecom applications, power conversion, and power factor correction (PFC). Motor control applications include the use of the device for current limiting and overvoltage protection. In telecom applications, the device is used to reduce energy consumption, while in power conversion applications, it is used to reduce losses due to high-frequency switching. In power factor correction applications, the device is used to reduce total harmonic distortion and improve power factor.

Working Principle of MBR20H100CT/45

The MBR20H100CT/45 is a full-controlled bridge rectifier device composed of four metal-oxide semiconductor field effect transistors (MOSFET) and one Schottky diode rectifier. This device utilizes an active clamping resistor, which causes the voltage applied to the Schottky-diode rectifier to operate at a low voltage drop across it. This helps to reduce switching losses in the device.

When an AC voltage is applied to the device, the MOSFETs switch on and off with a controlled frequency. As the voltage waveform goes through its peaks and troughs, the MOSFETs respond to the changing voltage by switching on and off to allow the current to flow from one of their ends to the other. In this way, the device functions as a rectifier bridge, allowing the current to pass through in one direction only.

At the same time, the Schottky-diode rectifier is actively clamped by a resistor, reducing the voltage drop across it. This helps to reduce switching losses and improve the efficiency of the device. The active clamping is also responsible for providing a low voltage drop across the MOSFETs, which makes them operate at higher speeds. This improves the speed of the device and increases its performance.

The MBR20H100CT/45 is an advanced rectifier bridge device that is designed for use in a wide range of applications. It is composed of four MOSFETs and one Schottky diode rectifier, and utilizes an active clamping resistor to reduce switching losses. This allows it to operate at higher speeds, providing improved performance for power conversion and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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