MBR20150

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io):	--
Voltage - Forward (Vf) (Max) @ If:	950mV @ 20A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1mA @ 150V
Capacitance @ Vr, F:	900pF @ 5V, 1MHz
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220AC
Operating Temperature - Junction:	-55°C ~ 150°C

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Diodes - Rectifiers - Single - MBR20150 Application Field and Working Principle

The MBR20150 is a single diode rectifier with a schottky barrier designed to provide a compact yet high efficiency power solution for a wide range of DC-DC conversion applications. This rectifier can provide a peak forward current of 15A and a reverse voltage of 200V. It is designed for operation in the temperature range of -55 to 125 °C. This device is suitable for reliability critical applications and characterized for soft turns on and fast reverse recovery. Thanks to its newdesign and its superior performance, the MBR20150 is increasingly adopted in a wide variety of applications.

Applications

The MBR20150 is one of the most versatile single diode rectifiers available as it is suitable for a wide range of applications in the industrial, automotive, and consumer markets. The wide range of applications includes voltagemultiplyers, DC-DC converters, power supplies, converters, battery chargers, portable medical devices, lighting applications, point of sale equipment, and LED drivers.

Working Principle

A diode rectifier is an electronic component that functions as a rectifier by allowing the flow of current in one direction only, ensuring that incoming AC current is converted to DC current before use in other electronic components. The MBR20150 operates on the Schottky barrier principle where a reverse biased P-N junction is formed between a metal and semiconductor material. This junction gives a low leakage current and a sharp turn off with fast recovery time. The P-N junction is formed by the Schottky barrier between the N-type semiconductor material and the metal material. The electrical biasing applied to the junction results in the majority of carriers coming from the semiconductor material and entering the metal material due to a diffusion effect. This causes an increased depletion width in the junction and majority carriers from the metal material flow through it and recombine with majority carriers from the negative terminal of the external circuit. This creates an condition of low current leakage between the terminals of the rectifier.When the terminal voltage of the rectifier is forward biased, current of majority carriers flow from anode to cathode. The majority carriers from the P-type material diffuse into the N-type material where holes are filled with electrons and electrons enter the P-type material to recombine with holes, leading to a net current flow.So effectively, with the application of a forward bias voltage, the majority carriers are shifted from the N-type material to the P-type material and this results in current flow through the rectifier. The current achieves a peak value with the application of a reverse bias voltage until the diode reaches its peak forward current.

Conclusion

The MBR20150 is a schottky barrier single diode rectifier that utilizes a P-N junction formed between a metal and semiconductor material. This rectifier provides a high efficiency and reliable single power solution suitable for a variety of DC-DC conversion applications. The MBR20150 is a versatile rectifier, with a peak forward current of 15A and reverse voltage of 200V, it is designed for operation in the temperature range of -55 to 125 °C. Making it suitable for high reliability applications.

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