Diodes - Rectifiers - Arrays

MBR25H50CTHE3/45 is an innovative rectifier diode array series from ON Semiconductor. This family of rectifier diodes provide high efficiency and high junction blocking voltages along with low forward voltage drop. Along with superior thermal characteristics, this diode array is designed to operate up to temperatures of +Tj = +175˚C.

Application Field

The MBR25H50CTHE3/45 is a fast recovery rectifier diode, designed for applications with high load currents. Such applications are typically found in power supplies, DC/DC converters and other large, single phase rectifier circuits. Other applications can include input and output rectifiers for large converters, for high frequency switching AC/DC and DC/DC converters, freewheeling diodes, polarity protection circuits, freewheeling circuits, battery charging, or industrial and telecom DC loads.

Working Principle

This rectifier diode array is designed to provide high efficiency and high peak forward current capability while maintaining simultaneously low forward voltage drops. Built in a high reliable TO-220 package, this diode array has a junction-to-case thermal resistance of Rj-c = 15 ˚C/W, allowing for efficient heat dissipation. Additionally, the MBR25H50CTHE3/45 can operate as fast as a 1 A current increase in less than 0.1 seconds, a typical feature of some switched-mode power supplies (SMPS).

The maximum of peak forward current and forward voltage drop are the most important parameters to ensure the best performance of the the diode array. The maximum forward current for the MBR25H50CTHE3/45 is 25 Amps, with a maximum peak repetitive reverse voltage of 500 Volts. The maximum reverse voltage of the diode will depend on the maximum current and the available blocking voltage. The forward voltage of this diode array will depend on the junction temperature and the current.

The reverse current of this diode array is generally very low, and is affected by the amount of reverse bias on the diode. The reverse current typically rises exponentially with the applied reverse voltage, and the reverse leakage voltage will be lower as the temperature increases. The maximum reverse leakage current is 0.8 mA at 25 ˚C.

In conclusion, the MBR25H50CTHE3/45 rectifier diode array from ON Semiconductor offers exceptional performance for applications requiring high efficiency and high junction blocking voltages. With a junction-to-case thermal resistance of 15 ˚C/W, a maximum peak forward current of 25 Amps, and a maximum peak repetitive reverse voltage of 500 Volts, this diode array is sure to provide reliable performance under high loads.