MBR2X100A200

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The MBR2X100A200 is a dual-body insulated gate bipolar transistor (IGBT) module. IGBTs are increasingly preferred to MOSFETs for applications such as AC/DC, DC/DC, and DC/AC power conversion and automotive applications due to their higher output voltage, current and efficiency ratings. The MBR2X100A200 integrates two power switches in a package with fast switching times, high blocking voltages and a low on-resistance.

Application Field

The MBR2X100A200 is ideal for use in both commercial and industrial power conversion applications, such as DC/DC converters and in appliances such as air conditioners. In DC/DC converters, it is used in power factor correction (PFC) circuits, switching AC-DC buck-boost/flyback converters, and other power supplies. It can also be used in AC/DC and DC/AC converters, as well as in motor control and automotive applications.

The module features a non-invasive current sensing technology that eliminates the need for complex current sensing circuits and enables accurate current control. Additionally, the module provides a soft switching and high efficiency solution, making it suitable for applications that require high energy efficiency.

Working Principle

The working principle of MBR2X100A200 is based on the switching characteristics of an insulated gate bipolar transistor (IGBT). The IGBT is a three-terminal device, which consists of two separate portions of the device. The main portion acts as a switch and the other consists of a control gate. The device is switched on or off by applying a positive voltage to the control gate. The control gate is also used to adjust the current flowing through the main portion of the device.

The MBR2X100A200 consists of two IGBTs in a single package. Each IGBT has a separate common-emitter connection and the two are connected in parallel. This makes for a high current handling capacity, which can reach up to 200 A. The two IGBTs are also individually controlled, so that when one is switched on, the other can be switched off. This switching off of both IGBTs allows for a fast, efficient power conversion process.

The MBR2X100A200 also features a diode-free soft switching technology, which reduces power losses due to operation of the IGBTs in anti-parallel mode. This technology is based on the use of active gate-clamp circuits and an active gate shift circuit. These circuits ensure that the difference between the gate-driving voltage and the IGBT’s collector-emitter voltage is always smaller than the device’s our voltage, thus avoiding switching losses.

The MBR2X100A200 is designed to minimize power losses due to switching activity, resulting in higher efficiency and power savings over the course of its operation. It also provides a reliable and highly efficient method of power conversion, making it ideal for a variety of applications.

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