| Allicdata Part #: | MBR20150CT-E1-ND |
| Manufacturer Part#: |
MBR20150CT-E1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | DIODE ARRAY SCHOTTKY 150V TO220 |
| More Detail: | Diode Array 1 Pair Common Cathode Schottky 150V 10... |
| DataSheet: | MBR20150CT-E1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 150V |
| Current - Average Rectified (Io) (per Diode): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10A |
| Speed: | Fast Recovery = 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 50µA @ 150V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MBR20150CT-E1 is a rectifier diode array which is specifically designed for today’s most demanding applications. It offers the ultimate level of performance and reliability with its wide voltage range from 1V up to 50V and current ratings from 625mA up to 12A. The MBR20150CT-E1 is capable of handling much higher power products than traditional rectifier diodes.
The application field for the MBR20150CT-E1 is extensive. It is used in power supply design, such as AC/DC converters, switch-mode power supplies and adapters, current inverter drive, lighting and UPS systems. It can also be used in automotive, measuring and solar application fields, as the device offers greater efficiencies at much higher power densities than traditional rectifiers.
The MBR20150CT-E1 works in principle as a single-step rectifier, with either high frequency or ultra-fast recovery time. In the forward bias region, the device act as a closed switch and will allow the current to flow. In the reverse bias region, the device will act as an open switch and will not allow the current to flow. This simple working principle allows the MBR20150CT-E1 to be used in numerous applications.
The device is fabricated using thin-film trench technology. This technology improves the MOSFET junction characteristics and provides superior reverse recovery times. The thin film process also offers high breakdown voltages and tight tolerance on Vf and trr parameters. Additionally, the etched trenches are filled with erodible material which improves Schottky diodes\' reliability and poplife.
The MBR20150CT-E1 is designed to have robust reliability, which ensures a long product lifespan. It has a minimum junction temperature of 175°C, which is much higher than traditional rectifiers. This allows it to maintain a low thermal resistance in a wide range of temperatures. In addition, the device has an optimized surge current capability and low power loss, providing high efficiency in all operating conditions.
Overall, the MBR20150CT-E1 is an excellent choice for today’s applications. Its wide voltage range, high power ratings, robust reliability, and thin-film trench technology make it a perfect device for numerous applications in the power, automotive, measuring and solar application fields.
The specific data is subject to PDF, and the above content is for reference
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MBR20150CT-E1 Datasheet/PDF