
Allicdata Part #: | MBR3050PTC0G-ND |
Manufacturer Part#: |
MBR3050PT C0G |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY SCHOTTKY 50V TO247AD |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 50V 30A... |
DataSheet: | ![]() |
Quantity: | 1000 |
5400 +: | $ 0.39690 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io) (per Diode): | 30A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 50V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (TO-3P) |
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The MBR3050PT C0G is a type of diode that is classified as an array, or a grouping of several diodes, in this case, 30 in total. It is commonly used in consumer electronics and other fields, including medical, defence, computing, and rail. Often, the MBR3050PT C0G is used in projects involving voltage regulation or power management applications. This diode array is especially valuable for its thermally-dependent resistance and low forward voltage.
The diode array of the MBR3050PT C0G, consists of various features, such as its low thermal resistance, low forward voltage, excellent temperature stability, and low capacitance. These all make the MBR3050PT C0G a desirable choice when working with sensitive electronic parts. Furthermore, it has been designed with one lead and a large number of pins, which makes it a great solution for efficient and cost effective circuit design. It is also capable of handling higher currents and voltages, which is especially helpful in applications involving large power usage.
The working principle of the MBR3050PT C0G is based on a simple diode theory. In brief, the diode is composed of two layers – a N-type semiconductor and a P-type semiconductor, which are arranged in a junction. When the voltage rises, the N- type becomes more conductive, allowing electrons to flow in the opposite direction. Conversely, when the voltage decreases, the P-type semiconductor becomes more conductive, thus preventing electricity from flowing in the opposite direction. In essence, this setup allows for the directional control of electricity.
This device is primarily employed in applications such as voltage regulators. It is capable of dealing with higher voltages and larger currents, complete with a step-down circuit of output voltage. In such applications, the MBR3050PT C0G can ensure both safety and stability of operation. Additionally, as it is well-insulated, it can withstand higher temperatures. Finally, with its excellent temperature characteristics, it can both protect the device from thermal shock and offer a longer lifespan.
The use of MBR3050PT C0G diodes is also growing in the automotive and energy storage fields. In the former, the MBR3050PT C0G can be used together with relays to avoid overvoltages from the alternator. Notably, the diodes can help avoid the damage caused by surges in the system. As for energy storage, the diodes can be used as a type of conversion-interface as it can protect the device by controlling the voltage flow from the battery. Thus, it is being applied to battery chargers and testing systems.
In summary, the MBR3050PT C0G is an array of diodes which is designed for working with voltage regulation and power management applications. It is compact and efficient, and features a low thermal resistance, forward voltage, capacitance, and good temperature characteristics. Furthermore, the function of the device is based on a simple diode theory, in which a P and N semiconductor are arranged in a junction to allow directional control of electricity. As the MBR3050PT C0G is gaining more attention, there is no doubt that it will be increasingly used in the future.
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