MBR30H100CTHE3/45

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Diodes, rectifiers and arrays are common components found in many electronic circuits. The MBR30H100CTHE3/45 is one such device, used to implement a range of different functions. In this article, the application field and working principle of the MBR30H100CTHE3/45 device will be discussed.

Application Field

The MBR30H100CTHE3/45 is an ultra-high voltage Schottky diode array, designed with a maximum reverse blocking capability of 100V. Its primary application is as a rectifier diode in a circuit, though it is also suitable for use as a free-wheeling diode or as a low-cost alternative to an SCR in some applications. It can also be used in switching power supplies, motor drives, non-critical battery charging systems, lamps with indirect power control, inductive heating circuits, and other applications that involve the rectification of AC current.

In DC circuits, the MBR30H100CTHE3/45 can be used to ensure that unwanted reverse currents are prevented from flowing. This allows for greater control over the electrical current in the circuit, as well as providing protection to other components. Furthermore, it is capable of handling large surge currents, making it well-suited for high power applications.

Working Principle

The efficiency of the MBR30H100CTHE3/45 is achieved by using Schottky barrier technology. The principle of this technology is based on the formation of a potential barrier at the contact between a metal and a semiconductor. This barrier prevents current from leaking back and forth across the interface, thus allowing the device to operate more efficiently than other types of diodes.

The current flow through the MBR30H100CTHE3/45 is enabled by the Schottky diode\'s ability to permit very little leakage current when in the reverse-biased direction. When the device is forward-biased, the potential barrier is broken down, allowing electrons to flow across the junction and into the n-type region. This flow of electrons carries the current in the desired direction.

Furthermore, the MBR30H100CTHE3/45\'s structure allows for the blocking of voltages up to 100V. This is achieved through the use of a metal-oxide-semiconductor (MOS) stack which results in the formation of a metal-insulator composite at the P-N junction. The composite acts to prevent current from flowing across the junction, allowing the device to handle higher voltages.

Finally, the MBR30H100CTHE3/45 also contains a number of protective features. It contains an integral over-voltage protection layer to protect against transient excess voltages, and it also includes thermal shut-off protection for preventing overheating.

In summary, the MBR30H100CTHE3/45 is an ultra-high voltage Schottky diode array, used primarily as a rectifier in AC circuits. It is capable of blocking voltages up to 100V, and it also includes a number of protective features to ensure safe operation. Its Schottky barrier technology makes it more efficient than traditional diodes and rectifiers, making it a suitable choice for high power applications.

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