
Allicdata Part #: | MBR40H45CT-E3/45GI-ND |
Manufacturer Part#: |
MBR40H45CT-E3/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY SCHOTTKY 45V TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 45V 20A... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io) (per Diode): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 640mV @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 40V |
Operating Temperature - Junction: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes and rectifiers form the basis of all electronics and as technology has progressed, engineer have sought suitable solutions to allow for high power, low loss and low cost rectification. To this end, MBR40H45CT-E3/45 provides a suitable solution. This device is a three chip high voltage Bridge-Trench Rectifier Array.
The bridge-trench rectifier array, or BTR-Array, is built with four high voltage rectifier currents arranged in an H-bridge form. Each current is driven through its own chip and can then be individually switched on and off. The two outer chips contain two rectifier currents each and the center chip contains two Schottky rectifier diodes, making the array suitable even for higher voltages.
The virtue of the MBR40H45CT-E3/45 lies in its capability to achieve low dropout voltages and low reverse current leakage. This allows for efficient rectification with an associated lower power loss than the standard diodes, bridges and arrays. Furthermore, since the rectifier currents are individually switched on and off, it creates a low voltage transistors which can operate even at much lower voltages with minimal power consumption.
The application field for this device is quite broad as it can be used in power rectification, power conversion, Semiconductor-on-Insulator (SOI) based systems, as well as space and aerospace applications. This device has been chosen by numerous manufacturers as a low power consuming, cost-effective rectifier array due to its excellent electrical characteristics.
The working principle of the MBR40H45CT-E3/45 is relatively simple. The four rectifier channels can be individually switched on or off, allowing for efficient power control. A well designed thermal management system and layout together with advanced control techniques allow for efficient thermal management to minimize the power dissipation. A built-in current regulation loop and the minimization of layer resistance allow for efficient current regulation with low dropout voltage.
The MBR40H45CT-E3/45 offers excellent high frequency performance and low EMI, making it suitable for high speed applications. The device is also very rugged, able to withstand high surge voltages and loads, making it suitable for a wide range of applications. In summary, the MBR40H45CT-E3/45 is a high power, low loss, cost effective bridge-trench rectifier array that can be used in a variety of applications.
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