
Allicdata Part #: | MBRA210LT3GOSTR-ND |
Manufacturer Part#: |
MBRA210LT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 10V 2A SMA |
More Detail: | Diode Schottky 10V 2A Surface Mount SMA |
DataSheet: | ![]() |
Quantity: | 55000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 10V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 350mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 700µA @ 10V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -55°C ~ 125°C |
Base Part Number: | MBRA210 |
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MBRA210LT3G is a diode-rectifier single from the semiconductor giant ON semiconductor. It is one of their most popular products in this field and they also offer its application as a field-effect transistor (FET). As part of their new generation of rectification diodes, this product offers a high reverse voltage protection and online Short-Circuit protection. It is optimized to work in low transient area, quickly recover, and guarantee excellent insulation against reverse voltages.
The MBRA210LT3G is designed to be used in a wide range of applications related to power management, such as LED illumination, power supplies, charging systems, and industrial applications. It offers superior performance by providing low voltage drop and low forward voltage, along with a wide current range. Because of its low power and low thermal resistance, it can be easily implemented into most designs and is suitable for operation in slim and slimline profiles.
The working principle of the MBRA210LT3G is based on a basic four-layer structure. It features an anode, cathode, gate, and cathode guard ring; the key components of the single-diode rectifier. The anode is where the current enters and the cathode is where the current exits. The gate serves as a switching transistor and a control element, while the cathode guard ring shields the cathode from excessive voltage. The working of the single-diode rectifier is such that when the voltage across the anode and cathode is above the breakdown voltage, the switch is in on state, allowing current to flow between the anode and cathode. Alternatively, when the voltage is between the breakdown voltage and the reverse breakover voltage, the diode is in a ‘half-on’ state, allowing a limited amount of current to flow between the anode and cathode. When the voltage becomes lower than the reverse breakover voltage, the diode is fully off, blocking the current between the anode and the cathode.
The MBRA210LT3G rectifier diode single is designed to operate in the forward bias region while in the reverse bias operation, it is designed to operate in the Zener region. Compared to other diode rectifiers, the MBRA210LT3G offers a lower reverse leakage, higher power dissipation, very low capacitance, high reverse voltage stand-off, low forward voltage drop and higher breakdown voltage.
The MBRA210LT3G offers an economical solution for a wide range of applications. It is a compact, reliable and cost-effective product. It is also featured with low thermal runaway and is resistant to the effects of transient conditions. Because of its features, it has been widely accepted in the market and has been watching from automotive, consumer electronics and computer, industrial, medical and many more applications.
The specific data is subject to PDF, and the above content is for reference
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