MBRB10H90CTHE3/81

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	90V
Current - Average Rectified (Io):	5A
Voltage - Forward (Vf) (Max) @ If:	760mV @ 5A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	3.5µA @ 90V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Operating Temperature - Junction:	-65°C ~ 175°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MBRB10H90CTHE3/81 Diodes - Rectifiers - Single Application Field and Working Principle Diodes are the most commonly used components in electronics and are essential items for all circuit designers. This article will discuss the application field and working principle of the single MBRB10H90CTHE3/81 diodes rectifier.

What is the MBRB10H90CTHE3/81

The MBRB10H90CTHE3/81 is a single-phase, ultrafast silicon rectifier bridge with built-in protection diodes. Its highly efficient design uses a long and narrow bridge element that maximizes the package’s overall footprint. This rectifier has a current rating of up to 10A and encapsulated in a plastic case with a built-in heat sink. The integrated protection diodes are designed to help protect the system from the most common stress conditions, such as reverse-bias, overload, high-current surge, and overvoltage.

Applications of the MBRB10H90CTHE3/81

The MBRB10H90CTHE3/81 is a popular choice for power supply and power conversion applications. It is suitable for designs that require high-temperature operation and particularly for use in highly efficient high-frequency switching applications. It can also be used in applications requiring high reverse-bias and surge currents, such as protection circuits for mobile phones and consumer electronics, and for power cycling of small motors.

Working Principle of the MBRB10H90CTHE3/81

The MBRB10H90CTHE3/81 diode rectifier works by using the P–N junction diode as a semiconductor. When a voltage is applied to the P–N junction, it becomes forward-biased, allowing electrons to flow through the junction. This creates an electric current and the device becomes conductive. When the voltage is reversed, the P–N junction becomes reverse-biased and no current flows. The integrated protection diodes provide over-voltage protection and surge current protection to ensure safe and reliable operation.

Advantages of the MBRB10H90CTHE3/81

The MBRB10H90CTHE3/81 offers a number of advantages. It operates at temperatures up to 175 degrees Celsius, making it well-suited for high-temperature applications. Its low forward voltage drop allows for greater efficiency and power-saving. Its built-in protection diodes help minimize stress on the system and minimize the risk of damage. It also has a compact packaging and a low capacitance to maximize the power input.

Conclusion

The MBRB10H90CTHE3/81 is a highly efficient single-phase ultrafast silicon rectifier bridge with built-in protection diodes. It is suitable for power supply, power conversion, and highly efficient high-frequency switching applications, as well as other mobile phone and consumer electronics protection circuits and small motor power cycling. Its features include a high temperature operation, low forward voltage drop, integrated protection diodes, compact packaging, and a low capacitance.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description