MBRB25H45CT-E3/81 Allicdata Electronics
Allicdata Part #:

MBRB25H45CT-E3/81-ND

Manufacturer Part#:

MBRB25H45CT-E3/81

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY SCHOTTKY 45V TO263AB
More Detail: Diode Array 1 Pair Common Cathode Schottky 45V 15A...
DataSheet: MBRB25H45CT-E3/81 datasheetMBRB25H45CT-E3/81 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 640mV @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Description

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The MBRB25H45CT-E3/81 (or MBRB25H45CT-E3/81) is a multifunctional device designed for diodes, rectifiers, and arrays. It has a wide range of applications in many different circuits and devices. The device can be used to provide power in various circuits and devices, such as those related to computers and electronics. In addition, it can also be used in industrial, electrical, and automotive applications.

The device is designed with a dual-gate MOSFET technology that enables high efficiency power conversion. In addition, it also provides a low voltage drop for higher power output. The micro/small-signal characteristics of the MBRB25H45CT-E3/81 are optimized for peak efficiency and low power consumption. The device has a high power rating of 45A and is capable of operating at voltage levels up to 40V.

The main feature of the MBRB25H45CT-E3/81 is its ability to provide high current in small and light-weight packages. It is designed to provide high current and excellent speed performance with low losses. The device also provides a very low reverse-leakage current. This enables the device to be used in high-current systems, such as battery-powered devices and power-hungry applications.

The working principle of the MBRB25H45CT-E3/81 is based on reverse bias rectification. The device contains two MOSFETs, one for the anode and one for the cathode. When the anode is connected to a voltage source, current can flow from the cathode to the anode. The anode is connected to the anode of the power supply and the cathode is connected to the cathode of the power supply. The current through the device is proportional to the voltage across the device.

The MBRB25H45CT-E3/81 is also designed to function as an array device. These arrays are usually used in high current applications such as in power conversion, motor control and battery charging systems. The arrays contain multiple parallel connected MOSFETs and can be configured in various ways to provide high currents with low voltage drops.

The MBRB25H45CT-E3/81 is an ideal choice for applications requiring high current and excellent speed performance. Its dual-gate MOSFET technology allows for high efficiency power conversion with low power consumption. The device provides a very low reverse-leakage current, which makes it suitable for use in high current systems. The device also functions as an array device, providing arrays of multiple MOSFETs for high current applications.

The specific data is subject to PDF, and the above content is for reference

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