
Allicdata Part #: | MBRB750-E3/81-ND |
Manufacturer Part#: |
MBRB750-E3/81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 50V 7.5A TO263AB |
More Detail: | Diode Schottky 50V 7.5A Surface Mount TO-263AB |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 7.5A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 7.5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | MBRB750 |
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The MBRB750-E3/81 is a part of the rectifier diodes family of single parts. It is a type of diode which is designed to pass electric current in one direction. This is achieved by having two terminals, an anode and a cathode, as opposed to a bidirectional diode. The anode terminal is more positive than the cathode terminal. The diode acts as an insulator, blocking the passage of current from the anode to the cathode. This property makes rectifier diodes useful for converting AC power into DC power, as well as other applications where a unidirectional current needs to be passed. The MBRB750-E3/81 is designed to handle currents up to 750 mA, at voltage ranges of 50 to 1000 volts. It is a medium power and average efficiency rectifier, with the average forward rectified current range from 0.3A to 1A and the forward voltage range from 1.5 to 1.7V. It is suitable for use in a variety of applications, including power supplies, motor controls, and battery charging systems.The basic working principle of the MBRB750-E3/81 is based on the P-N junction diode. This type of diode is formed by joining n-type and p-type semiconductors in contact with one another, which creates a depletion region in the junction. When a voltage is applied to the diode, the depletion region\'s width is altered, changing the resistance of the junction itself. This is based on the Ebers–Moll equation, which relates to the current-voltage characteristic of a diode when the voltage across it is less than the breakdown voltage, producing the diode\'s typical nonlinear forward-biased curve. When the applied voltage is forward biased, meaning the anode is more positive than the cathode, majority carriers are swept across the junction due to the built-in electric field. This creates a current flow across the diode, blocking the reverse current, thus only allowing the current to flow in one direction. At the same time, however, the applied voltage must not exceed the breakdown voltage, otherwise the external electric field outperforms the internal electric field and causes current to flow in both directions, something which should be avoided as much as possible. The MBRB750-E3/81 is a popular choice for power rectifier applications, as well as motor control circuits, battery chargers and power supplies. It is well suited for these types of applications due to its high current handling capacity, high efficiency and good reliability. The diode is also capable of handling surge currents and transient voltages, making it a great choice for protection against overvoltage and overcurrent conditions.In summary, the MBRB750-E3/81 is part of the family of single rectifier diodes designed to allow current to flow in one direction only while providing good current handling capacity, efficiency and reliability. Its basic working principle is based on the P-N junction diode, where an electric field is created to prevent reverse current and allow forward current. It is commonly used in power supplies, motor controls, battery chargers and overvoltage/overcurrent protection applications.
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