
Allicdata Part #: | MBRS10H200CTMNG-ND |
Manufacturer Part#: |
MBRS10H200CT MNG |
Price: | $ 0.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ARRAY SCHOTTKY 200V TO263 |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 200V 10... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.33806 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 970mV @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB (D²PAK) |
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Diodes are essential components in virtually every electronic circuit and are used extensively in electronic equipment and products. Diodes are typically used to control the flow of current in a circuit, allowing current to flow in one direction only. Rectifier diodes are especially designed for use in rectifier circuits, allowing current to be readily converted from AC to DC. Arrays of diodes are often used in electronic circuits where large numbers of diodes are required in a compact form. Power rectifier arrays, for example, contain large numbers of high-power rectifier diodes.
The MBRS10H200CT MNG is a 10A 200V N-channel MOSFET that is generally used as a power rectifier in power applications. It is a low-resistance (2mΩ) unipolar N-channel power MOSFET that offers a great degree of safety and reliability when used in rectifier circuits. The MBRS10H200CT MNG is a popular choice for rectifier applications in industrial, telecommunications, computers and office equipment.
The MBRS10H200CT MNG’s application fields include motor control, AC/DC rectification, voltage regulation, battery charging and other applications that require low-resistance and high power-handling capability. The MOSFET can easily handle currents up to 10A and voltages up to 200V. It is capable of high-speed current-switching up to 3MHz and its maximum power dissipation is 2.4W.
The MBRS10H200CT MNG working principle involves the use of an N-channel MOSFET as a power rectifier. The MOSFET is connected to an AC source and is used to convert an AC source to DC by rectification. The MOSFET is electrically connected across a circuit with the drain and source terminals connected to the AC source. When the AC source is applied to the circuit, the MOSFET is activated, allowing current to flow through it and the rectification process to occur. The MOSFET is able to control the flow of current and voltage, providing the system with low-loss conversion and high-quality DC power.
The MBRS10H200CT MNG offers users a solution to power rectification in applications that require a low-resistance, high-power rectifier. Its compact size and high-performance capability make it an ideal choice for power rectification in various industrial, telecommunications, computers and office equipment. Its low-resistance and high-power MOSFET design ensures safety and reliable conversion in rectifier circuits. The working principle of the MBRS10H200CT MNG relies on the use of an N-channel MOSFET as a power rectifier, allowing the MOSFET to control the flow of current and voltage in the circuit, providing the system with low-loss conversion and high-quality DC power.
The specific data is subject to PDF, and the above content is for reference
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