
Allicdata Part #: | MBRS130LFSTR-ND |
Manufacturer Part#: |
MBRS130L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 2A SMB |
More Detail: | Diode Schottky 30V 2A Surface Mount SMB (DO-214AA) |
DataSheet: | ![]() |
Quantity: | 18000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 445mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB (DO-214AA) |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | MBRS130 |
Description
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Diodes - Rectifiers - Single: MBRS130L application field and working principle
The MBRS130L is a Schottky Barrier Rectifier that is part of the series of single rectifier diodes. This diode is used in many areas such as: power supplies, battery chargers, home appliances, automotive, telecommunications, and many industrial applications.The MBRS130L is a high power rectifier that is capable of handling currents up to 3A and operating at a maximum voltage of 30V. It has a low forward voltage drop of 0.45 V and a low reverse leakage current of 0.85 mA. It also has a fast recovery time of 200 ns, and good thermal stability.The working principle of the MBRS130L is based on the related Schottky barrier rectifier technology, which relies on the metal-semiconductor contact to form a very low barrier potential. The semiconductor material used in the circuit is usually a NPN transistor, while the metal-semiconductor contact contains metal-silicone or titanium-silicone, depending on the specific application.When a forward bias is applied to the terminal of the MBRS130L, minority carriers from the N-type region are injected into the metal-semiconductor junction. The injected carriers are then swept away due to the barrier potential across the PN junction, and the current thus generated is collected by a metal-semiconductor contact.When the input voltage applied to the MBRS130L is reversed, the current reverses its flow direction and the current also stops. The diode is also subject to reverse recovery time, which is the time duration taken to complete the transition from forward bias to the OFF state when the voltage is reverse.The MBRS130L rectifier diode, due to its large forward current handling capability and low forward voltage drop, is an ideal choice for a wide range of semiconductor and power supply related applications. Moreover, its low reverse current, small size, and fast recovery time, makes it a perfect component for many types of circuits.In conclusion, the MBRS130L rectifier diode is an effective solution for numerous applications related to power supplies and semiconductor solutions. It offers great features such as a low forward voltage drop, fast recovery time and good thermal stability, which makes it a suitable component for many situations. Its advanced design also provides excellent current handling capability, making it perfect for various industrial, automotive and telecommunications solutions.The specific data is subject to PDF, and the above content is for reference
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