MBRS15200CT-Y MNG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	950mV @ 7.5A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 200V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB (D²PAK)

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Introduction:

MBRS15200CT-Y MNG (Merged NPN-PNP) is a type of device that consists of a PNP diode array and an NPN diode array integrated in a single package. It is designed primarily for the protection of power transistors against reversed bias polarities, over-voltages and thermal runaways. It also has a wide range of applications in the fields of noise reduction, power line protection, and EMI suppression.

Application Fields:

MBRS15200CT-Y MNG diodes can be used in a variety of applications, including:

• Telecommunications: MBRS15200CT-Y MNG diodes provide overvoltage protection on analog lines or digital lines, and they can be used to reduce the power line noise.
• Automotive: MBRS15200CT-Y MNG diodes provide protection against overvoltage and thermal runaways on power transistors.
• Industrial: MBRS15200CT-Y MNG diodes are used for power line protection and EMI suppression.
• Computers: MBRS15200CT-Y MNG diodes are used to protect computer chips from damage due to reversed polarities, overvoltages and thermal runaways.
• Medical: MBRS15200CT-Y MNG diodes can protect medical equipment such as imaging systems and MRI machines from damage due to reversed polarities and overvoltages.

Working Principle:

MBRS15200CT-Y MNG diodes are designed to protect electronic components from overvoltage and reverse polarity damage. The Protected NPN diode array is connected in series between the power supply lines and the electronic component, while the Protected PNP diode array is connected in series between the electronic component and the ground. When an overvoltage situation arises, such as when the supply voltage is greater than the rating of the electronic component, the Protected NPN diode array begins to conduct, redirecting the high voltage away from the component. The Protected NPN diode array can be designed to have a very low breakdown voltage, giving it the ability to protect components from small voltages, as well as large voltages.In the case of a reverse polarity situation, the Protected PNP diode array will begin to conduct, redirecting the negative voltage away from the protected component. The Protected PNP diode array can also be designed to have a very low breakdown voltage, giving it the ability to protect components from small voltages, as well as large voltages.

Conclusion:

MBRS15200CT-Y MNG diodes are a type of diode array that is designed primarily for the protection of power transistors against reversed bias polarities, over-voltages and thermal runaways. It has a wide range of applications in the fields of telecommunications, automotive, industrial, computer, and medical equipment. The Protected NPN and PNP diode arrays are connected in series between the power supply lines or ground and the electronic component, respectively, and they begin to conduct when an overvoltage or reverse polarity situation arises, redirecting the voltage away from the protected component.

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