MBRS320T3G

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1. Describe

These devices use the Schottky barrier principle over a large area Metal silicon power diode. State-of-the-art geometric features Epitaxial structure with oxide passivation and metal coating touch. Very suitable for low-voltage, high-frequency rectification, or As a freewheeling and polarity protection diode, surface mount Applications where compact size and weight are critical to the system.

2. Feature

    1. Small and compact surface mount package with J-shaped bent leads

    2. Rectangular packaging for automatic processing

    3. Highly stable oxide passivation junction

    4. Very low forward voltage drop (0.5 V Max @ 3.0 A, TJ = 25°C)

    5. Excellent ability to withstand reverse avalanche energy transients

    6. Guard ring for stress protection

    7. The equipment passed ISO 7637 Pulse #1

    8. SBRS8 and NRVB prefixes, suitable for automotive and other applications that require unique site and control change requirements;

        - AEC-Q101 qualification and PPAP capability*

    9. These devices are lead-free, halogen-free/BFR-free and RoHS compliant

3. Mechanical properties

    1. Housing: epoxy resin, molded, epoxy resin conform to UL 94 V−0

    2. Weight: 217 mg (approximately)

    3. Surface treatment: all outer surfaces are corrosion resistant and terminals Leads are easy to solder

    4. Lead wire and mounting surface temperature for soldering purposes: Up to 260°C for 10 seconds

    5. Polarity: The polarity band on the plastic body indicates the cathode lead

    6. Equipment meets MSL 1 requirements

    7. ESD rating:

        - Machine model = C (> 400 V)

        - Human body model = 3B (> 8000 V)

4. Electrical characteristics

5. PACKAGE DIMENSIONS