Allicdata Part #: | MBT2222ADW1T1GOSTR-ND |
Manufacturer Part#: |
MBT2222ADW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 40V 0.6A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 60... |
DataSheet: | MBT2222ADW1T1G Datasheet/PDF |
Quantity: | 7344 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MBT2222AD |
Description
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The MBT2222ADW1T1G is a bipolar junction transistor (BJT) array integrated circuit from ON Semiconductor. It consists of two NPN transistors, each with an individual base and collector, sharing a common emitter. The transistor array is primarily intended for general-purpose switching and amplifier applications. Its high current gain configuration is suitable for driving multiple logic gates, other logic circuits, and analog logic systems.
Unlike single transistors which must be connected in parallel before they can answer to multiple logic inputs, the MBT2222ADW1T1G is designed to provide two independent transistors in one package. This configuration allows it to process two inputs simultaneously. It also protects the two transistors from excessive current, while minimizing power dissipation. Additionally, the array has an incredibly fast switching speed which makes it suitable for large-scale integration applications, such as automotive and industrial control systems.
The MBT2222ADW1T1G transistor array works in the same way as two individual BJTs. A voltage is applied to the base-emitter junction of each transistor to control its current. In the “on” state, the current flows from the collector to the emitter and the transistor is said to be “open”. In the “off” state, the current is blocked and the transistor is “closed”. The two transistors can be used together to form a complex logic circuit, or individually, as an amplification stage.
The two transistors in the MBT2222ADW1T1G array vary in their characteristics. The first transistor has a bipolar current gain of 180 with a collector-emitter saturation voltage of 6V. The second transistor has a bipolar current gain of 30 with a collector-emitter saturation voltage of 13V. Parameters such as input impedance and power dissipation depend on the application and the conditions used for measuring them.
The MBT2222ADW1T1G is a reliable and versatile device which makes it well-suited for a wide range of applications. It can be used in digital circuits to create logic gates, as an interface between TTL and CMOS chips, and in analog systems such as audio amplifiers and oscillators to provide gain and accurate wave shaping. Additionally, due to its wide temperature range, low current consumption and fast switching capabilities, it can also be used in systems which require precise temperature control and speed.
With its easy to use package and high performance parameters, the MBT2222ADW1T1G is an ideal choice for a variety of switching and amplification applications. It is capable of meeting most system design needs and its low cost makes it a cost-effective solution for both consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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