MBT6429DW1T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	500 @ 100µA, 5V
Power - Max:	150mW
Frequency - Transition:	700MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	MBT6429D

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The MBT6429DW1T1G is a Bipolar Junction Transistor (BJT) array. A BJT array is a chip of transistors that contain two or more transistors in one package. It is convenient for designers who need to add multiple transistors of the same type to their designs. The MBT6429DW1T1G array is made up of five NPN transistors each having a collector-emitter breakdown voltage (BVCEO) of 40V, a collector-emitter saturation voltage (VCEsat) of 0.4V and a base-emitter voltage (VBE) of –1.8V to –2V.
The main application fields of the MBT6429DW1T1G is industrial control and consumer electronics. This array is used in industrial control applications to control the switching of large current loads and it is also used in consumer electronic applications to drive LED’s and motors.
In industrial control applications, the MBT6429DW1T1G is used to drive many large current loads such as relays, contactors, lamps and motors. It can also be used in circuits that require low voltage driving voltage, such as micro-controllers and other low voltage digital circuits.
In consumer electronic application, the MBT6429DW1T1G is used to drive LED’s and motors. This array is often used in LED lighting circuits to control the intensity of the LED’s, and it can also be used to control the speed of a small DC motor.
The working principle of the MBT6429DW1T1G is based on the principle of voltage amplification. The base current ib, that flows from the base to the emitter, is amplified by the transistors to increase the collector current Ic. When the base current ib is applied, the base-emitter voltage (VBE) will cause electrons to flow from the emitter to the collector creating the amplified collector current Ic. The current gain of the NPN transistor is defined by its Beta gain Factor, β value.
The MBT6429DW1T1G is a very versatile array of transistors that can be used in a variety of applications. The main applications are industrial control and consumer electronics, where the array is used to drive large current loads. It can also be used in low voltage digital circuits or to control the intensity and speed of LED’s and motors respectively. The working principle of this array is based on the principle of voltage amplification, where the small base current ib is amplified by the transistors to increase the collector current Ic.

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