MC10H113P

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The MC10H113P is a dual 4-input NOR gate with protection diodes constructed with Si-gate CMOS technology. This device withstands voltages of up to 30V, giving it superior performance compared to other CMOS device while maintaining lower power consumption.

The MC10H113P provides an ideal solution for low-voltage applications and includes provisions for power-off protection. It is especially suitable for logic applications requiring both high speed and high noise immunity with its improved noise margin capability. The device can also be used in a variety of digital logic applications, such as multiplexers, SISO (serial-in serial-out) logic circuits, and logic interface circuits.

The MC10H113P is a four-input NOR Gate with protection diodes. It includes two separate 4-input NOR Gates in a single package. Each gate has four input terminals, each of which can receive an input signal of either a HIGH (1) or LOW (0) logic level. The output signal is then determined by the logic state of the two common inputs. If both of the common inputs are at a HIGH (1) level, the output will be LOW (0). Conversely, if either of the common inputs are at a LOW (0) level, the output will be HIGH (1).

The MC10H113P uses a Si-gate CMOS technology to provide superior performance and low power consumption. Unlike other CMOS logic devices, the MC10H113P withst ands voltages up to 30V. This high breakdown voltage gives the device a higher noise immunity and improved noise margin compared to other CMOS devices. The MC10H113P also includes power-off protection to ensure that the device does not become damaged if the power supply is suddenly cut off.

The MC10H113P is ideal for a variety of logic applications, such as multiplexers, SISO (serial-in serial-out) logic circuits, logic interface circuits and others. The device is well-suited for low-voltage systems and its improved noise margin and high-breakdown voltage make it a reliable solution for applications where noise immunity is required.

In summary, the MC10H113P is a dual 4-input NOR gate with protection diodes. It is constructed with Si-gate CMOS technology and provides superior performance while consuming low power. It withstands voltages up to 30V and has a high noise immunity and improved noise margin, making it suitable for low-voltage applications. The MC10H113P is an ideal solution for logic applications requiring both high speed and high noise immunity.

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