MC1413BDR2G Allicdata Electronics

MC1413BDR2G Discrete Semiconductor Products

Allicdata Part #:

MC1413BDR2GOSTR-ND

Manufacturer Part#:

MC1413BDR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 7NPN DARL 50V 0.5A 16SO
More Detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 50...
DataSheet: MC1413BDR2G datasheetMC1413BDR2G Datasheet/PDF
Quantity: 12500
Stock 12500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: --
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: MC1413B
Description

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MC1413BDR2G is a bipolar junction transistor (BJT) array. It is one of the most popular BJT arrays available on the market today. It is designed for a wide range of applications, from low frequency amplifiers, to high frequency devices.The MC1413BDR2G array is comprised of 11 NPN transistors, each with its own collector and emitter, on a 9-pin dual in-line package. Each core element has 3 collectors, 2 emitters and 2 base connections, allowing it to conduct current in either forward or reverse biased modes. The emitter followers provide the ability to switch voltage and current, while the collector followers provide the ability to control current and voltage gain.The MC1413BDR2G array is capable of operating at frequencies up to 12.5 MHz and delivers up to 100 mA of current. It is also available with on-board Zener diode protection, which provides protection against over current and over voltage.The applications of the MC1413BDR2G array include signal amplifiers, power supplies, motor control circuits, low-noise amplifiers, receiving and transmitting circuits, and other circuit designs where high current is required. It is particularly suited for circuits in which high performance and reliability are required.In terms of working principle, the MC1413BDR2G array is based on the process of controlling the current flow in the base of transistors, which then determines the current gains of the transistors. When a base current is applied, a voltage drop occurs between the collector and emitter of the transistor due to the resistance of the base-emitter junction. This voltage drop acts as a current regulator, controlling the current flow through the transistor, and thus its current gain.When a base-emitter junction of one transistor is forward biased, the collector current of the transistor increases exponentially with the base current. This increase in collector current forces the base current of the following transistor to decrease, reducing the current flow through the transistor, and thus reducing the current gain of the transistor array.By controlling the relative current flow through the transistors, it is possible to control the gain of the entire array. This allows the MC1413BDR2G array to be used for audio frequency control, power supply regulation, instrumentation amplifiers, filter circuits, and many other applications.The MC1413BDR2G array is ideal for high frequency and low noise applications, providing outstanding performance and reliability. It is a versatile device, suitable for a wide range of applications. It is also available with on-board Zener diode protection, making it even more reliable and efficient.

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