MC33153DR2G Allicdata Electronics

MC33153DR2G Integrated Circuits (ICs)

Allicdata Part #:

MC33153DR2GOSTR-ND

Manufacturer Part#:

MC33153DR2G

Price: $ 0.67
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC DRIVER GATE SINGLE IGBT 8SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: MC33153DR2G datasheetMC33153DR2G Datasheet/PDF
Quantity: 2500
1 +: $ 0.67000
10 +: $ 0.64990
100 +: $ 0.63650
1000 +: $ 0.62310
10000 +: $ 0.60300
Stock 2500Can Ship Immediately
$ 0.67
Specifications
Logic Voltage - VIL, VIH: 1.2V, 3.2V
Base Part Number: MC33153
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 17ns, 17ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 1A, 2A
Series: --
Voltage - Supply: 11 V ~ 20 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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MC33153DR2G is a type of PMIC – Gate Drivers. It is a low side gate drive MOSFET solution which is housed in a small DFN package and tailored for automotive applications. Gate drivers provide a driver for the MOSFETs used in power conversions circuits. Gate drivers provide the necessary bridge between the controller signals and the MOSFETs.Gate drivers can be linear or switch-mode, and they typically fall into two categories: Low-side drivers, which provide both output current and voltage levels; and high-side drivers, which provide both input current and voltage levels.

The MC33153DR2G is a low-side gate driver, operating at up to 40V in a wide variety of conditions, including automotive and industrial applications. It provides a full, low-side gate drive of up to 2A and can be used to control the MOSFETs in a power converter circuit. The MC33153DR2G can also be used to increase the control range of applications, making it ideal for synchronous buck, boost, and SEPIC converters. It provides a 600ns typical rise time and 4A peak output current, allowing for fast switching and low power loss.

The MC33153DR2G includes an integrated 3-state logic buffer, allowing for flexible configuration of the gate drive output. This SOIC-8 N-channel MOSFET gate driver features a slew rate of 600ns and is designed to operate in conduit-rich environments up to 40V. The MC33153DR2G is designed to support MOSFETs with drain voltages up to 19V and can be used in boost, buck, or SELV converters. In addition, the MC33153DR2G includes a built in current level protection feature, which helps protect the gate driver from excessive gate current.

The MC33153DR2G is ideal for applications such as automotive battery charging systems, car audio and infotainment systems, lighting control systems, HVAC systems, and home appliances. The gate driver can be used to achieve increased efficiency and power handling capabilities, while also offering a low overhead to implement. Additionally, the MC33153DR2G comes with integrated protection and start/stop functions, making it easy to integrate into wide range of applications.

The MC33153DR2G operates by utilizing two signals: the control signal, and the gate voltage. When the control signal is low, the gate voltage is applied to the MOSFET drain terminal; when the control signal is high, the gate voltage is removed from the MOSFET drain terminal. This method enables the MOSFET to turn on or off. Additionally, the MC33153DR2G includes an integrated active current level protection feature, which helps reduce power losses due to excessive gate current.

Overall, the MC33153DR2G is a highly efficient, low-side gate driver MOSFET solution tailored for automotive applications. It offers a low overhead to implement, withStart/Stop and integrated protection, making it ideal for a wide range of applications. The MC33153DR2G provides a full, low-side gate drive of up to 2A and can be used to control the MOSFETs in a power Converter circuit, allowing for efficient power conversions.

The specific data is subject to PDF, and the above content is for reference

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