MC3423P1G Allicdata Electronics
Allicdata Part #:

MC3423P1GOS-ND

Manufacturer Part#:

MC3423P1G

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: ON Semiconductor
Short Description: IC SENSOR UNDERVOLTAGE 8DIP
More Detail: N/A
DataSheet: MC3423P1G datasheetMC3423P1G Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Clamping: --
Technology: Mixed Technology
Number of Circuits: 2
Applications: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Description

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Transient voltage suppression (TVS) diodes are widely used to protect sensitive circuitry from a variety of high transient power supplies, such as those found in automotive applications. A specific type of TVS diode that falls into the “mixed technology” category is the MC3423P1G, which offers high performance protection against transients. This article will explore the application fields and working principles of the MC3423P1G.

The MC3423P1G is a low capacitance, multi-trench TVS diode. The device is ideally suited for the protection of automotive logic circuits, including controllers, sensors, and gate drivers. It is also used for the protection of digital components in other applications such as consumer electronics, communication systems, and medical electronics. The MC3423P1G is rated for a maximum reverse standoff voltage of 33 volts, and it is capable of handling transient voltage levels up to 135 volts.

The MC3423P1G is a unipolar diode with a multi-dirac negative-TC conduction characteristic. This characteristic provides robust ESD protection and eliminates the possibility of latch-up. The diode also has a wide working temperature range of -40°C to 125°C, making it suitable for use in high temperature applications such as automotive systems. The device offers excellent ESD protection against IEC61000-4-2 Level 4 contact discharges of up to +8kV and air discharges of up to +15kV.

When considering the working principle of the MC3423P1G, it is important to note that the diode is capable of dissipating high energy pulses, while at the same time providing relatively low capacitance. This is because the diode is made of a composite structure consisting of a silicon body and silicon nitride layers. This composite structure allows the diode to operate with higher breakdown voltages while still providing low capacitance which reduces ringing and reduces stress on the protected circuit.

The application of the MC3423P1G is quite simple. It can be placed across the supply rails of the device and it will conduct reverse current when a voltage surge is applied to the circuit. The diode will begin to conduct when the voltage exceeds its breakdown voltage and it will limit any further increase in the voltage by clamping the voltage down to its rated breakdown voltage. This will protect the device from any further damage from the voltage surge.

In conclusion, the MC3423P1G is an ideal device for the protection of automotive logic circuits, digital components in consumer electronics, communication systems, and medical electronics. Its features include a low capacitance, multi-trench structure, and a unipolar conduction characteristic. The diode is also capable of dissipating high energy pulses with a wide working temperature range and robust ESD protection, making it highly suitable for high temperature applications. Understanding the application fields and working principles of the MC3423P1G will help in selecting the best protection for sensitive circuitry from a variety of high transient power supplies.

The specific data is subject to PDF, and the above content is for reference

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