MCL4448-TR3 Discrete Semiconductor Products

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MCL4448-TR3 Application Field and Working Principle

MCL4448-TR3 is a single chip, high voltage, medium power rectifier diode, suitable for power supply for various types of high frequency circuits, such as switching-mode power supplies, low frequency converters, RF converters, and so on. This rectifier diode utilizes a silicon-on-sapphire technology, delivering an optimal combination of forward conduction current, reverse conduction current and power ratings with the lowest leakage current. Its unique features and ease of integration with other components make it one of the most popular products in the diodes-rectifiers market.

Application Field of MCL4448-TR3

MCL4448-TR3 is mainly used in power level circuits, such as DC-DC converters, impedance matching networks and bridges. It is also used in different circuits for rectifying AC voltage to DC voltage, low frequency converters, low voltage converters, high voltage applications. The rectifier is ideal for power conversion applications such as Power-over-Ethernet, DC/DC converters, RF converters and automotive applications.

MCL4448-TR3 is particularly well suited for use in Point of Load (POL) converters, due to its low reverse leakage current and its ability to withstand high transient voltage. This rectifier diode can also be used in snubbers, EMC protection and capacitive discharge circuits in power systems. As a high voltage rectifier, MCL4448-TR3 can replace multiple discrete rectifiers in high power applications.

Working Principle of MCL4448-TR3

MCL4448-TR3 functions as a power rectifier diode. It utilizes a silicon-on-sapphire technology, which helps in delivering an optimal combination of forward conduction current, reverse conduction current, and power ratings with the lowest leakage current.

The silicon layer acts as an insulation and helps in the prevention of leakage current between the positive and the negative sides of the circuit. The sapphire substrate is used to provide enhanced heat dissipation. This helps in the reduction of power consumption, as the device operates at a lower temperature.

The diode exhibits mixed conduction, meaning that both the forward- and the reverse-bias operation can be performed within the specified operating limits. When the voltage is applied in the forward bias of the rectifier diode, a forward conduction current (I_F) flows through it. The forward voltage drop (V_f) of the diode is used to determine the reverse conduction current (I_R) of the device. In reverse bias operation, the device will conduct a reverse conduction current (I_R). The diode has the ability to suppress transient voltage surge leading to the protection of the circuit from damage due to overloads.

MCL4448-TR3 has a breakdown voltage (V_BR) of 2V, a leakage current (I_O) of 2mA, a maximum reverse voltage (V_R) of 15V, a forward voltage drop (V_F) of 1.5V and a maximum reverse leakage current (I_R) of 800uA.

Conclusion

MCL4448-TR3 is a single chip, high voltage, medium power rectifier diode. It utilizes a silicon-on-sapphire technology, delivering an optimal combination of forward conduction current, reverse conduction current, and power ratings with the lowest leakage current. It is mainly used in power level circuits, such as DC-DC converters, impedance matching networks and bridges. The device will conduct a forward conduction current (I_F) when voltage is applied in the forward bias, and a reverse conduction current (I_R) when voltage is applied in the reverse bias. Its unique features and ease of integration make it one of the most popular products in the rectifiers market.

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