MD918A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	900mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 3mA, 5V
Power - Max:	2W
Frequency - Transition:	600MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-78-6 Metal Can
Supplier Device Package:	TO-78-6

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The MD918A is a silicon planar monolithic array transistors with a novel emitter pitch geometry developed specifically to ensure improved high frequency characteristics. This device is an ideal choice for high density applications that require higher speed and lower losses due to its low voltage gain and high breakdown voltage characteristics.The MD918A is constructed in a standard complementary pair of NPN and PNP transistors, with a fixed-width 1mm center width. The package is designed to reduce power dissipation, as well as allowing for better thermal management for higher speed applications.The main features of the MD918A include: high power, low saturation voltage, low voltage gain and high breakdown voltage. These features make the MD918A well suited for applications such as audio amplifiers, high frequency low power RF amplifiers and pulse generation circuits. The low saturation voltage of the MD918A transistors allows them to provide increased power and efficiency, while the high breakdown voltage allows them to safely handle large voltage swings.The MD918A also boasts a high slew rate, as well as low power dissipation. The high frequency characteristics also allow faster response times, as well as improved signal integrity. These features make the MD918A a great choice for applications where high speed and lower power consumption is desired.The MD918A also has a wide operating temperature range, which allows it to be used in a variety of settings, from standard room temperature applications to extreme environments. The wide operating temperature also allows for improved reliability, as the device will not be affected by fluctuations in temperature.The MD918A is a great choice for applications that require higher speed, lower power consumption and improved signal integrity. This device is an ideal choice for high density applications which require improved high frequency characteristics and better thermal management. Its low voltage gain and high breakdown voltage characteristics make it well suited for applications such as audio amplifiers, high frequency low power RF amplifiers, pulse generation circuits, and any other applications where improved signal integrity and higher performance is desired.

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