Allicdata Part #: | MDD310-22N1-ND |
Manufacturer Part#: |
MDD310-22N1 |
Price: | $ 95.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | DIODE MODULE 2.2KV 305A Y2-DCB |
More Detail: | Diode Array 1 Pair Series Connection Standard 2200... |
DataSheet: | MDD310-22N1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 85.68000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 2200V |
Current - Average Rectified (Io) (per Diode): | 305A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 600A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 40mA @ 2200V |
Mounting Type: | Chassis Mount |
Package / Case: | Y2-DCB |
Supplier Device Package: | Y2-DCB |
Base Part Number: | MDD310 |
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The MDD310-22N1 is a semiconductor device included in the category of diodes, rectifiers, and arrays. It is designed for a range of applications including use in portable and battery-powered devices, monitors and video displays, as well as server or telecom equipment. The device integrates four Schottky photo diodes and four protection resistors in a single silicon chip, which reduces package sizes and allows for higher performance.The MDD310-22N1 features a wide forward voltage range of 5 V to 50 V, as well as a low forward voltage drop of 0.1 V at the rated output current and power dissipation of up to 1.5 W. The device offers good temperature rise and continuous current handling capability of up to 4 A. The device also features a strong reverse current Guard-Ring to protect the other components and protect against any leakage. The MDD310-22N1 is an ideal device for applications requiring high signal frequency and high efficiency, making it a good choice for modern, lighter and high-efficiency signal and power switching applications. The device exhibits low heat generation, low power consumption and low EMI, making it an ideal choice for many power control applications.The working principle of the MDD310-22N1 is based on the idea of the Schottky diode, which is a diode that consists of a metal-semiconductor junction. This junction consists of two separate layers, one of which is a metal, while the other is a semiconductor material. The metal electrode provides a low-resistance path for electrons, while the semiconductor material is responsible for carrying the electrons between the two layers.When there is a voltage applied to the device, the electrons from the metal layer travel swiftly to the semiconductor material and holes created in the semiconductor material. As the electrons travel, they collect energy, which results in an electric current flowing through the device. This electric current is then used as a source of power for the device, allowing it to operate.The MDD310-22N1 device provides an efficient, low heat generation and high-frequency switching ability suitable for many power control applications. It features high-speed switching and low-voltage operation, and its low power consumption and EMI characteristics allow for a high performance at low cost. The device’s wide forward voltage range, low voltage drop and strong Guard-Ring provide for efficient and reliable operation. Overall, the MDD310-22N1 is a versatile device suitable for a range of applications requiring low heat generation, low power consumption, and efficient power and signal switching. Its features make it an ideal choice for many current and modern power and signal switching requirements.
The specific data is subject to PDF, and the above content is for reference
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