MDMA65P1200TG

Diodes - Rectifiers - Arrays

MDMA65P1200TG is a power diode designed to rectify high current. It is part of the rectifier array family of diodes. The structure used to manufacture this particular power diode is a double sided, silicon or gallium arsenide (GaAs) diode featuring a large area of gate that helps with conducting current.

Application Field:

The main application field for the MDMA65P1200TG is for rectifying high current, such as in applications where high power conversion efficiencies are desired. It has uses in digital power supplies and is suitable for solar inverter, bridge rectifiers, LED lighting, automotive and telecom applications. The diode also has applications in medical and consumer electronic devices.

Working Principle:

The core principle of a power diode is to rectify current by utilizing a system of two oppositely connected p-type and n-type doped regions of the device. As the current flows through the device, electrons flow through the path of least resistance, which results in rectified current. Types of diodes differ in terms of the construction of p-type and n-type regions, as well as the materials used in the construction of the semiconductor substrate.

In the case of the MDMA65P1200TG power diode, the construction incorporates a silicon or gallium arsenide (GaAs) substrate. The device also has a large gate area that helps with the conduction of current. This, combined with the doping of the substrate, enables the device to provide more efficient current flow and better performance.

The diode also has a low forward volt drop which helps to reduce the levels of heat that are generated. This heat generation is critical to the reliability of the device and is minimized by utilizing the latest technology in silicon or GaAs wafers. The diode also has an operating temperature range of -55°C to +125°C, making it suitable for use in various temperature environments.