MDO500-20N1 Allicdata Electronics
Allicdata Part #:

MDO500-20N1-ND

Manufacturer Part#:

MDO500-20N1

Price: $ 103.30
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: DIODE GEN PURP 2KV 560A Y1-CU
More Detail: Diode Standard 2000V 560A Chassis Mount Y1-CU
DataSheet: MDO500-20N1 datasheetMDO500-20N1 Datasheet/PDF
Quantity: 1000
3 +: $ 92.96700
Stock 1000Can Ship Immediately
$ 103.3
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 560A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 30mA @ 2000V
Capacitance @ Vr, F: 576pF @ 700V, 1MHz
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Supplier Device Package: Y1-CU
Base Part Number: MD*500
Description

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Diodes – Rectifiers – Single

The MDO500-20N1 is a single-diode Schottky rectifier that can be used for most junction rectification applications. It is capable of providing very low reverse leakage, low forward voltage drop and fast switching performance. This diode has a maximum forward current rating of 500mA, reverse voltage rating of 20V, and temperature outlet of 175°C.

Application Fields

The MDO500-20N1 is especially suitable for rectifying applications like DC-DC converters, power supplies, battery charging and more DC-related systems that require low Voltage drop, low reverse leakage and high efficiency. It can also be used in unregulated power supply circuits, linear voltage regulators, and cellphone charger bank converters. Moreover, it can be utilized in a wide range of switching power supply applications such as AC/DC converters, DC/DC converters, PFC (Power Factor Correction) circuits, line-frequency power supplies, etc.

Working Principles

The single-diode MDO500-20N1 operates under the combined principles of electron injection and occupation of energy states by electrons. Under positive polarities, electrons are injected from the N-type semiconductor (N+) into the P-type semiconductor (P+) electrode. During this injection of electrons, the P+ accepts electrons from the N+ and adjusts the composition of elements contained in the P+ electrode to attain a balance between the flow of electrons from both sides of the diode. This is what causes the P+ electrode to exhibit a voltage potential higher than that of the N+ side.

On the other hand, when the junction is under reverse polarities, the electrons that were previously injected into the P+ remain, occupying their respective high-energy states. Consequently, the electrons that flow in at the junction obstruction prevents the movement of electrons from one electrode to the other. This leads to an increase in the reverse leakage current present at the junction, causing a drop in voltage potential of the P+ side. This principle is referred to an "Edge Barrier Effect" and its presence signifies the proper working of the rectifier.

In conclusion, the MDO500-20N1 single-diode rectifier is suitable for most junction rectification applications with its low reverse leakage, low forward voltage drop and fast switching performance.

The specific data is subject to PDF, and the above content is for reference

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